Current Transport Modeling of Carbon Nanotubes

The purpose of this book is to develop a complete
current transport
model for carbon nanotube field effect transistors
(CNT-FETs),
applicable in the analysis and design of integrated
circuits. The
model is derived by investigating the electronic
structure of carbon
nanotubes and by using the basic laws of
electrostatics in a field
effect transistor. By describing the carrier
concentration and charge
distribution in carbon nanotubes, analytical
expressions for the
carbon nanotube potential are derived and used to
obtain current
transport equations for a CNT-FET. Threshold and
saturation
voltages expressions are each derived in the process
and I-V
characteristics for CNT-FETs are calculated using
different
combinations of chiral vectors. The voltage transfer
characteristics of
basic logic circuits based on complementary CNT-FETs
are also
studied. A small-signal radio frequency (rf) model is
developed and
it is shown to have cut-off frequencies in the upper
GHz range.
Finally, due to the rapid growth of carbon nanotubes
as bio- and
chemical sensing devices, possible methods to
interpret and analyze
CNT-FETs when utilized as biosensors are also presented.

Autorentext
A successful scientist from San Salvador, El Salvador, who at the age of only 20 was already a college graduate. In 2001, he joined the graduate program at Louisiana State University and obtained his Masters and Doctoral degrees in Electrical Engineering. His research interests include carbon nanotubes, VLSI design, and nanotechnology.

Klappentext
The purpose of this book is to develop a complete current transport model for carbon nanotube field effect transistors (CNT-FETs), applicable in the analysis and design of integrated circuits. The model is derived by investigating the electronic structure of carbon nanotubes and by using the basic laws of electrostatics in a field effect transistor. By describing the carrier concentration and charge distribution in carbon nanotubes, analytical expressions for the carbon nanotube potential are derived and used to obtain current transport equations for a CNT-FET. Threshold and saturation voltages expressions are each derived in the process and I-V characteristics for CNT-FETs are calculated using different combinations of chiral vectors. The voltage transfer characteristics of basic logic circuits based on complementary CNT-FETs are also studied. A small-signal radio frequency (rf) model is developed and it is shown to have cut-off frequencies in the upper GHz range. Finally, due to the rapid growth of carbon nanotubes as bio- and chemical sensing devices, possible methods to interpret and analyze CNT-FETs when utilized as biosensors are also presented.