Investigation of p-i-n GaAs structures by DLTS method

The DLTS (Deep Level Transient Sprctroscopy) method is used for measuring of deep levels in p-n structures, Schottky diodes, etc. The p-i-n diodes are complicated multi layer structures, containing wide i-layer and two junctions: n-i and p-i. As a result, the diode consist of two series capacities. Applied voltage is focused on i-layer and weakly modulates the space charge area in n- and p- layers. The "source" (technological layer) that is responsible for DLTS signal can be hardly recognized, and therefore it is difficult to estimate the concentration of deep levels and determine the origin of these defects. The main goal of the work is the interpretation of measured DLTS spectra on commercial GaAs p+-p-i-n-n+ structures to indentify the deep level centers and their properties in p-i-n region.

Autorentext

Jana Toompuu was born in Võru, Estonia, in 1980. She received B.S. degree in 2003 and M.S. degree in 2009 in electronics from Tallinn University of Technology. Now she is researcher in Tallinn University of Technology in Department of Electronics. Currently Jana continues her studies in the same university as Ph.D. student.