Low-Power High-Speed ADCs for Nanometer CMOS Integration

This text is about the design and implementation of ADC in nanometer CMOS processes that achieve lower power consumption than previous designs, through architectural and circuit innovations that take advantage of unique features of nanometer CMOS processes.

Low-Power High-Speed ADCs for Nanometer CMOS Integration is about the design and implementation of ADC in nanometer CMOS processes that achieve lower power consumption for a given speed and resolution than previous designs, through architectural and circuit innovations that take advantage of unique features of nanometer CMOS processes. A phase lock loop (PLL) clock multiplier has also been designed using new circuit techniques and successfully tested.

1) A 1.2V, 52mW, 210MS/s 10-bit two-step ADC in 130nm CMOS occupying 0.38mm2. Using offset canceling comparators and capacitor networks implemented with small value interconnect capacitors to replace resistor ladder/multiplexer in conventional sub-ranging ADCs, it achieves 74dB SFDR for 10MHz and 71dB SFDR for 100MHz input.

2) A 32mW, 1.25GS/s 6-bit ADC with 2.5GHz internal clock in 130nm CMOS. A new type of architecture that combines flash and SAR enables the lowest power consumption, 6-bit >1GS/s ADC reported to date. This design can be a drop-in replacement for existing flash ADCs since it does require any post-processing or calibration step and has the same latency as flash.

3) A 0.4ps-rms-jitter (integrated from 3kHz to 300MHz offset for >2.5GHz) 1-3GHz tunable, phase-noise programmable clock-multiplier PLL for generating sampling clock to the SAR ADC. A new loop filter structure enables phase error preamplification to lower PLL in-band noise without increasing loop filter capacitor size.

Implementation detail of three state-of-the-art low-power high-performance ADC and clock multiplier PLL designs using unique architectures Concise and graphical explanation of key points in ADC/PLL design at both architecture and circuit level Theory backed by extensive measurement results from actual silicon

Klappentext

Low-Power High-Speed ADCs for Nanometer CMOS Integration is about the design and implementation of ADC in nanometer CMOS processes that achieve lower power consumption for a given speed and resolution than previous designs, through architectural and circuit innovations that take advantage of unique features of nanometer CMOS processes. A phase lock loop (PLL) clock multiplier has also been designed using new circuit techniques and successfully tested.

1) A 1.2V, 52mW, 210MS/s 10-bit two-step ADC in 130nm CMOS occupying 0.38mm2. Using offset canceling comparators and capacitor networks implemented with small value interconnect capacitors to replace resistor ladder/multiplexer in conventional sub-ranging ADCs, it achieves 74dB SFDR for 10MHz and 71dB SFDR for 100MHz input.

2) A 32mW, 1.25GS/s 6-bit ADC with 2.5GHz internal clock in 130nm CMOS. A new type of architecture that combines flash and SAR enables the lowest power consumption, 6-bit >1GS/s ADC reported to date. This design can be a drop-in replacement for existing flash ADCs since it does require any post-processing or calibration step and has the same latency as flash.

3) A 0.4ps-rms-jitter (integrated from 3kHz to 300MHz offset for >2.5GHz) 1-3GHz tunable, phase-noise programmable clock-multiplier PLL for generating sampling clock to the SAR ADC. A new loop filter structure enables phase error preamplification to lower PLL in-band noise without increasing loop filter capacitor size.

Zusammenfassung

Low-Power High-Speed ADCs for Nanometer CMOS Integration is about the design and implementation of ADC in nanometer CMOS processes that achieve lower power consumption for a given speed and resolution than previous designs, through architectural and circuit innovations that take advantage of unique features of nanometer CMOS processes. A phase lock loop (PLL) clock multiplier has also been designed using new circuit techniques and successfully tested.

1) A 1.2V, 52mW, 210MS/s 10-bit two-step ADC in 130nm CMOS occupying 0.38mm2. Using offset canceling comparators and capacitor networks implemented with small value interconnect capacitors to replace resistor ladder/multiplexer in conventional sub-ranging ADCs, it achieves 74dB SFDR for 10MHz and 71dB SFDR for 100MHz input.

2) A 32mW, 1.25GS/s 6-bit ADC with 2.5GHz internal clock in 130nm CMOS. A new type of architecture that combines flash and SAR enables the lowest power consumption, 6-bit >1GS/s ADC reported to date. This design can be a drop-in replacement for existing flash ADCs since it does require any post-processing or calibration step and has the same latency as flash.

3) A 0.4ps-rms-jitter (integrated from 3kHz to 300MHz offset for >2.5GHz) 1-3GHz tunable, phase-noise programmable clock-multiplier PLL for generating sampling clock to the SAR ADC. A new loop filter structure enables phase error preamplification to lower PLL in-band noise without increasing loop filter capacitor size.

Inhalt
A 52 mW 10 b 210 MS/s Two-Step ADC for Digital IF Receivers in 130 nm CMOS.- A 32 mW 1.25 GS/s 6 b 2 b/Step SAR ADC in 130 nm Digital CMOS.- A 0.4 ps-RMS-Jitter 13 GHz Clock Multiplier PLL Using Phase-Noise Preamplification.- Conclusions and Future Directions.