QUANTUM MECHANICAL EFFECTS ON MOSFET SCALING LIMIT

As CMOS technology continuous to be aggressively
scaled, it approaches a point where classical physics
is insufficient to explain the behavior of a MOSFET.
At this classical physics limit, a quantum mechanical
model becomes necessary to provide thorough
assessment of the device performance and scaling.
This book describes advanced modeling of nanoscale
bulk MOSFETs incorporating critical quantum
mechanical effects such as gate direct tunneling and
energy quantization of carriers.
The models derived here are used to project MOSFET
scaling limits. These limits of bulk MOSFETs are
predicted according to various criteria, including
circuit power and delay, device leakage current and
the system uniformity requirement. Tunneling and
quantization effects cause large power dissipation,
low drive current, and strong sensitivities to
process variation, which greatly limit CMOS scaling.
Developing new materials and structures is imminent
to extend the scaling process.

Autorentext
Lihui Wang received the Ph.D. degree from the Georgia Institute of Technology in 2006. His doctoral research focused on the quantum mechanical effects in MOSFET devices. He is currently a Senior Device Engineer in National Semiconductor Corporation. His research interest is on-chip electrostatic discharge protection design.

Klappentext
As CMOS technology continuous to be aggressively scaled, it approaches a point where classical physics is insufficient to explain the behavior of a MOSFET. At this classical physics limit, a quantum mechanical model becomes necessary to provide thorough assessment of the device performance and scaling. This book describes advanced modeling of nanoscale bulk MOSFETs incorporating critical quantum mechanical effects such as gate direct tunneling and energy quantization of carriers. The models derived here are used to project MOSFET scaling limits. These limits of bulk MOSFETs are predicted according to various criteria, including circuit power and delay, device leakage current and the system uniformity requirement. Tunneling and quantization effects cause large power dissipation, low drive current, and strong sensitivities to process variation, which greatly limit CMOS scaling. Developing new materials and structures is imminent to extend the scaling process.