Semiconductor Device Attachment by Silver Paste Sintering

Silver interconnection has superior performance than
current interconnection materials/techniques,
including conductive adhesives and reflowed solders;
but high processing temperature prevent its
application.
With the large external pressure, the micro-scale
silver paste can be sintered to form high-quality
interconnection layer at 240oC. The external
pressure, however, makes this technique difficult to
implement.
Because nanoscale silver particles have lower
sintering temperature, several approaches were
developed to address sintering challenges of
nanoscale silver particles, such as particles
aggregation, agglomeration, and non-
densification diffusion at low temperature. The low-
temperature sintering nanoscale technique was
successfully demonstrated in the interconnecting SiC
device for high-temperature application.
This book should be helpful for researches and
engineers in the power semiconductor
assembling and applications. Since this book
demonstrated a novel sintering technique with
superior performance even at high temperature
( 800oC), it should be also useful to professionals
in high power LED, laser device, and etc.

Autorentext

Zach (Zhiye) Zhang, Ph.D.: Studied power semiconductor at
Virginia Tech University. Staff Engineer at Alpha & Omega
Semiconductor Inc., California. One of his research won R&D 100
awards in 2007.

Klappentext

Silver interconnection has superior performance than current interconnection materials/techniques, including conductive adhesives and reflowed solders; but high processing temperature prevent its application. With the large external pressure, the micro-scale silver paste can be sintered to form high-quality interconnection layer at 240oC. The external pressure, however, makes this technique difficult to implement. Because nanoscale silver particles have lower sintering temperature, several approaches were developed to address sintering challenges of nanoscale silver particles, such as particles aggregation, agglomeration, and non- densification diffusion at low temperature. The low- temperature sintering nanoscale technique was successfully demonstrated in the interconnecting SiC device for high-temperature application. This book should be helpful for researches and engineers in the power semiconductor assembling and applications. Since this book demonstrated a novel sintering technique with superior performance even at high temperature (>800oC), it should be also useful to professionals in high power LED, laser device, and etc.