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Strain Effect in Semiconductors
Details
This text presents the fundamentals and applications of strain in semiconductors and semiconductor devices that is relevant for strain-enhanced advanced CMOS technology and strain-based piezoresistive MEMS transducers.
Strain Effect in Semiconductors: Theory and Device Applications presents the fundamentals and applications of strain in semiconductors and semiconductor devices that is relevant for strain-enhanced advanced CMOS technology and strain-based piezoresistive MEMS transducers. Discusses relevant applications of strain while also focusing on the fundamental physics pertaining to bulk, planar, and scaled nano-devices. Hence, this book is relevant for current strained Si logic technology as well as for understanding the physics and scaling for future strained nano-scale devices.
Provides industry relevant applications for strained CMOS technology Discusses range of applications from planar (2D) to nano-wire (1D) devices Treats strain physics at both qualitative overview level as well as detailed fundamental physics Explains strain physics relevant to logic devices as well as strain-based MEMS Sensors and strain in optoelectronic devices Includes supplementary material: sn.pub/extras
Klappentext
Strain Effect in Semiconductors: Theory and Device Applications presents the fundamentals and applications of strain in semiconductors and semiconductor devices that is relevant for strain-enhanced advanced CMOS technology and strain-based piezoresistive MEMS transducers. The book discusses relevant applications of strain while also focusing on the fundamental physics as they pertain to bulk, planar, and scaled nano-devices. Lead authors Yongke Sun, Scott Thompson and Toshikazu Nishida also:
- Treat strain physics at both the qualitative overview level as well as provide detailed fundamentals
Explain strain physics relevant to logic devices as well as strain-based MEMS This book is relevant to current strained Si logic technology, as well as for understanding the physics and scaling of future strain nano-scale devices. It is perfect for practicing device engineers at semiconductor manufacturers, as well as graduate students studying device physics at universities.
Inhalt
Overview: The Age of Strained Devices.- Band Structures of Strained Semiconductors.- Stress, Strain, Piezoresistivity, and Piezoelectricity.- Strain and Semiconductor Crystal Symmetry.- Band Structures of Strained Semiconductors.- Low-Dimensional Semiconductor Structures.- Transport Theory of Strained Semiconductors.- Semiconductor Transport.- Strain in Semiconductor Devices.- Strain in Electron Devices.- Piezoresistive Strain Sensors.- Strain Effects on Optoelectronic Devices.
Weitere Informationen
- Allgemeine Informationen
- GTIN 09781489983152
- Genre Elektrotechnik
- Auflage 2010
- Sprache Englisch
- Lesemotiv Verstehen
- Anzahl Seiten 364
- Größe H235mm x B155mm x T20mm
- Jahr 2014
- EAN 9781489983152
- Format Kartonierter Einband
- ISBN 1489983155
- Veröffentlichung 20.11.2014
- Titel Strain Effect in Semiconductors
- Autor Yongke Sun , Toshikazu Nishida , Scott E. Thompson
- Untertitel Theory and Device Applications
- Gewicht 552g
- Herausgeber Springer US