Nanometer-Scale Resistivity of Copper Films and Interconnects

A highly versatile simulation program is developed
and used to
examine how the resistivity of thin metal films and
lines increases as
their dimensions approach and become smaller than the
mean free
path of electrons in metals such as copper (size
effect). The
simulation program: 1) provides a more accurate
calculation of
surface scattering effects than that obtained from
the usual
formulation of Fuchs theory, 2) calculates
grain-boundary effects
that are consistent with the theory of Mayadas and
Shatzkes, 3)
includes the effects of surface and grain-boundary
scattering either
separately or together, and 4) simulates the effect
on resistivity if a
surface of a film or line has a different value for
the scattering
parameter. The increase in resistivity with
decreasing thickness of
thin, evaporated copper films (approximately 10 nm to
150 nm
thick) was determined from sheet resistance and film
thickness
measurements. Good agreement between the experimental
results
with those of the simulation program was obtained
when the
measured mean grain sizes were used by the simulation
program.

Autorentext

Arif Emre Yarimbiyik holds a B.S. degree in physics from IstanbulTechnical University and a D.Sc. degree in computer engineering from the GeorgeWashington University. During his doctoral study, he was a guest researcher at NIST,Gaithersburg, MD. Since 2007, he has been working as a software engineer in OpenBand ofVirginia, LLC.

Klappentext

A highly versatile simulation program is developed and used to examine how the resistivity of thin metal films and lines increases as their dimensions approach and become smaller than the mean free path of electrons in metals such as copper (size effect). The simulation program: 1) provides a more accurate calculation of surface scattering effects than that obtained from the usual formulation of Fuchs' theory, 2) calculates grain-boundary effects that are consistent with the theory of Mayadas and Shatzkes, 3) includes the effects of surface and grain-boundary scattering either separately or together, and 4) simulates the effect on resistivity if a surface of a film or line has a different value for the scattering parameter. The increase in resistivity with decreasing thickness of thin, evaporated copper films (approximately 10 nm to 150 nm thick) was determined from sheet resistance and film thickness measurements. Good agreement between the experimental results with those of the simulation program was obtained when the measured mean grain sizes were used by the simulation program.