Nitride Semiconductor Light-Emitting Diodes (Leds)
Details
Nitride Semiconductor Light-Emitting Diodes (LEDs): Materials, Technologies, and Applications, Second Edition reviews the fabrication, performance and applications of the technology, encompassing the state-of-the-art material and device development, along with considerations regarding nitride-based LED design. This updated edition is based on the latest research and advances, including two new chapters on LEDs for large displays and laser lighting. Chapters cover molecular beam epitaxy (MBE) growth of nitride semiconductors, modern metalorganic chemical vapor deposition (MOCVD) techniques, the growth of nitride-based materials, and gallium nitride (GaN)-on-sapphire and GaN-on-silicon technologies for LEDs. Nanostructured, non-polar and semi-polar nitride-based LEDs, as well as phosphor-coated nitride LEDs, are also discussed.
The book also addresses the performance of nitride LEDs, including photonic crystal LEDs, surface plasmon enhanced LEDs, color tuneable LEDs, and LEDs based on quantum wells and quantum dots. Further chapters discuss the development of LED encapsulation technology and fundamental efficiency droop issues in gallium indium nitride (GaInN) LEDs.
It is a technical resource for academics, physicists, materials scientists, electrical engineers, and those working in the lighting, consumer electronics, automotive, aviation, and communications sectors.
Autorentext
 Prof. JianJang Huang received the B.S. degree in Electrical Engineering (EE) and the M.S. degree in Graduate Institute of Photonics and Optoelectronics (GIPO) from National Taiwan University (NTU), Taipei, Taiwan, in 1994 and 1996, respectively, and the Ph.D. degree in Electrical Engineering from the University of Illinois, Urbana-Champaign, in 2002. He had worked with WJ (Watkins Johnson) Communications in California, as a Staff Scientist from 2002 to 2004. He then came back to Taiwan in 2004 and is currently the professor at NTU EE and GIPO.
Prof. Huang has been involved in the development of optoelectronic and electronic devices. He has developed a spin-coating method for nanosphere lithography (NSL) to significantly improve the performance of light emitting diodes (LEDs), solar cells and nanorod devices. His NSL approach has been licensed to several LED companies in Taiwan. He has also fabricated and characterized IGZO TFTs and the corresponding circuits on glass and flexible substrates. In recent years, his group has spent great efforts in realizing cancer cell probes using ZnO nanorods, and high-sensitivity protein sensors based on IGZO TFTs.
Prof. Huang is a member of the Phi Tau Phi Scholastic Honor Society. He received "Wu Da-Yu? award in 2008, the most prestigious one for young researchers in Taiwan sponsored by National Science Council. And in the same year, he received the award for the most excellent young electrical engineer from the Chinese Institute of Electrical Engineering. He has served in several IPO committees in Taiwan Stock Exchange. He is currently the board director of GCS holdings in Torrance, CA, USA and the conference chair of SPIE, International Conference on Solid-State Lighting.
Inhalt
Part One Materials and fabrication
- Molecular beam epitaxy (MBE) growth of nitride semiconductors
 - MOCVD growth of nitride semiconductors
 - GaN on sapphire substrates for visible light-emitting diodes
 - Gallium nitride (GaN) on silicon substrates for LEDs
 - Phosphors for white LEDs
 - Recent development of fabrication technologies of nitride LEDs for performance improvement
 - Nanostructured LED
 Nonpolar and semipolar LEDs
Part Two Performance of nitride LEDs
- Efficiency droop in GaInN/GaN LEDs
 - Photonic crystal nitride LEDs
 - Nitride LEDs based on quantum wells and quantum dots
 - Colour tuneable LEDs and pixelated micro-LED arrays
 - Reliability of nitride LEDs
 - Physical mechanisms limiting the performance and the reliability of GaN-based LEDs
 Chip packaging: encapsulation of nitride LEDs
Part Three Applications of nitride LEDs
- White LEDs for lighting applications
 - Ultraviolet LEDs
 - Infrared emitters using III-nitride semiconductors
 - LEDs for liquid crystal display (LCD) backlighting
 - LEDs and automotive lighting applications
 - LEDs for large displays
 - LEDs for projectors
 
Weitere Informationen
- Allgemeine Informationen
- GTIN 09780081019429
 - Genre Physics
 - Auflage 2. A.
 - Anzahl Seiten 822
 - Herausgeber Elsevier Science & Technology
 - Größe H229mm x B152mm x T39mm
 - Jahr 2017
 - EAN 9780081019429
 - Format Kartonierter Einband
 - ISBN 978-0-08-101942-9
 - Veröffentlichung 01.10.2017
 - Titel Nitride Semiconductor Light-Emitting Diodes (Leds)
 - Autor Huang Jian-Jang , Kuo Hao-chung , Shen Shyh-Chiang
 - Untertitel Materials, Technologies, and Applications
 - Gewicht 1310g
 - Sprache Englisch