Wir verwenden Cookies und Analyse-Tools, um die Nutzerfreundlichkeit der Internet-Seite zu verbessern und für Marketingzwecke. Wenn Sie fortfahren, diese Seite zu verwenden, nehmen wir an, dass Sie damit einverstanden sind. Zur Datenschutzerklärung.
Dopants and Defects in Semiconductors
Details
This revised edition continues to provide the most complete coverage of the fundamental knowledge of semiconductors. In addition to inclusion of new chapter problems and worked examples, it delves into solid-state lighting (LEDs and laser diodes), and offers a solid foundation for experimental methods and the theory of defects in semiconduc
Praise for the First Edition
"The book goes beyond the usual textbook in that it provides more specific examples of real-world defect physics ... an easy reading, broad introductory overview of the field"
Materials Today
"... well written, with clear, lucid explanations ..."
Chemistry World
This revised edition provides the most complete, up-to-date coverage of the fundamental knowledge of semiconductors, including a new chapter that expands on the latest technology and applications of semiconductors. In addition to inclusion of additional chapter problems and worked examples, it provides more detail on solid-state lighting (LEDs and laser diodes). The authors have achieved a unified overview of dopants and defects, offering a solid foundation for experimental methods and the theory of defects in semiconductors. **
Matthew D. McCluskey is a professor in the Department of Physics and Astronomy and Materials Science Program at Washington State University (WSU), Pullman, Washington. He received a Physics Ph.D. from the University of California (UC), Berkeley.
Eugene E. Haller** is a professor emeritus at the University of California, Berkeley, and a member of the National Academy of Engineering. He received a Ph.D. in Solid State and Applied Physics from the University of Basel, Switzerland.
Autorentext
Matthew D. McCluskey is a professor in the Department of Physics and Astronomy and Materials Science Program at Washington State University (WSU), Pullman, Washington. He received a Physics Ph.D. from the University of California (UC), Berkeley, in 1997, and was a postdoctoral researcher at the Xerox Palo Alto Research Center (PARC) (California) from 1997 to 1998. Dr. McCluskey joined WSU as an assistant professor in 1998. His research interests include defects in semiconductors, materials under high pressure, shock compression of semiconductors, and vibrational spectroscopy.
Eugene E. Haller is a professor emeritus at the University of California, Berkeley, and a member of the National Academy of Engineering. He received a Ph.D. in Solid State and Applied Physics from the University of Basel, Switzerland, in 1967. Dr. Haller joined the Lawrence Berkeley National Laboratory (California) as a staff scientist in 1973. In 1980, he was appointed associate professor in the Department of Materials Science Engineering, UC, Berkeley. His major research areas include semiconductor growth, characterization, and processing; far-infrared detectors, isotopically controlled semiconductors, and semiconductor nanocrystals.
Inhalt
- Semiconductor Basics 2. Defect Classifications 3. Interfaces and Devices 4. Crystal Growth and Doping 5. Electronic Properties 6. Vibrational Properties 7. Optical Properties 8. Thermal Properties 9. Electrical Measurements 10. Optical Spectroscopy 11. Particle-Beam Methods 12. Microscopy and Structural Characterization
Weitere Informationen
- Allgemeine Informationen
- GTIN 09780367781439
- Genre Physics
- Auflage 2. A.
- Anzahl Seiten 372
- Herausgeber CRC Press
- Größe H254mm x B178mm
- Jahr 2021
- EAN 9780367781439
- Format Kartonierter Einband
- ISBN 978-0-367-78143-9
- Veröffentlichung 31.03.2021
- Titel Dopants and Defects in Semiconductors
- Autor McCluskey Matthew D. , Haller Eugene E.
- Gewicht 690g
- Sprache Englisch