Gunn Diode

A Gunn diode, also known as a transferred electron device (TED), is a form of diode used in high-frequency electronics. It is somewhat unusual in that it consists only of N-doped semiconductor material, whereas most diodes consist of both P and N-doped regions. In the Gunn diode, three regions exist: two of them are heavily N-doped on each terminal, with a thin layer of lightly doped material in between. When a voltage is applied to the device, the electrical gradient will be largest across the thin middle layer. Conduction will take place as in any conductive material with current being proportional to the applied voltage. Eventually, at higher field values, the conductive properties of the middle layer will be altered, increasing its resistivity and reducing the gradient across it, preventing further conduction and current actually starts to fall down. In practice, this means a Gunn diode has a region of negative differential resistance. The negative differential resistance, combined with the timing properties of the intermediate layer, allows construction of an RF relaxation oscillator simply by applying a suitable direct current through the device.

Klappentext

Please note that the content of this book primarily consists of articles available from Wikipedia or other free sources online. A Gunn diode, also known as a transferred electron device (TED), is a form of diode used in high-frequency electronics. It is somewhat unusual in that it consists only of N-doped semiconductor material, whereas most diodes consist of both P and N-doped regions. In the Gunn diode, three regions exist: two of them are heavily N-doped on each terminal, with a thin layer of lightly doped material in between. When a voltage is applied to the device, the electrical gradient will be largest across the thin middle layer. Conduction will take place as in any conductive material with current being proportional to the applied voltage. Eventually, at higher field values, the conductive properties of the middle layer will be altered, increasing its resistivity and reducing the gradient across it, preventing further conduction and current actually starts to fall down. In practice, this means a Gunn diode has a region of negative differential resistance. The negative differential resistance, combined with the timing properties of the intermediate layer, allows construction of an RF relaxation oscillator simply by applying a suitable direct current through the device.