High Voltage P-channel DMOS-IGBTs in SiC

SiC has been an excellent material for power
switching devices because of its wide bandgap and
high breakdown field. SiC power MOSFETs below 10 kV
have been successfully developed and fabricated in
the past decade. However, MOSFETs blocking above 10
kV face the problem of high on-state resistance.
This problem cannot be solved within MOSFET itself.
P-channel IGBTs, a new type of SiC power transistors
that provide a solution for 20 kV applications, are
studied in this book. Extensive numerical simulation
is carried out to demonstrate the device performance
and to optimize the device design. The first high
performance 20 kV P-IGBT is successfully fabricated.
These P-IGBTs exhibit significant conductivity
modulation in the drift layer, which greatly reduces
the on-state voltage drop. Assuming a 300 Watt per
square centimeter power package limit, the maximum
currents of the experimental P-IGBTs are 1.24x and 2x
higher than the theoretical maximum current of a 20
kV MOSFET at room temperature and 177°C, respectively.

Autorentext

Yang Sui was born in Harbin, China in 1977. He received his B.E. and M.S. degrees from Tsinghua Univ. (Beijing, China) and Iowa State Univ. (Ames, USA), respectively. He received the Ph.D. degree in Electrical and Computer Engineering from Purdue Univ. (W. Lafayette, USA) in 2007. His current research focuses on graphene tunneling transistors.

Klappentext
SiC has been an excellent material for power switching devices because of its wide bandgap and high breakdown field. SiC power MOSFETs below 10 kV have been successfully developed and fabricated in the past decade. However, MOSFETs blocking above 10 kV face the problem of high on-state resistance. This problem cannot be solved within MOSFET itself. P-channel IGBTs, a new type of SiC power transistors that provide a solution for 20 kV applications, are studied in this book. Extensive numerical simulation is carried out to demonstrate the device performance and to optimize the device design. The first high performance 20 kV P-IGBT is successfully fabricated. These P-IGBTs exhibit significant conductivity modulation in the drift layer, which greatly reduces the on-state voltage drop. Assuming a 300 Watt per square centimeter power package limit, the maximum currents of the experimental P-IGBTs are 1.24x and 2x higher than the theoretical maximum current of a 20 kV MOSFET at room temperature and 177C, respectively.