Metal Induced Crystallization and Polysilicon Thin Film Transistors

Nowadays,active-matrix addressing using a-Si TFTs is
dominating in the flat panel display markets.
However, low temperature polysilicon has been
proposed and considered to be a promising alternative
technology. Metal induced crystallization (MIC) is
one of the methods to obtain high quality polysilicon
films at low temperatures.

A few technologies are presented in this monograph,
which improve the quality of MIC polysilicon film and
hence the performance of TFTs built on.

Amelioration of MIC processes has been made to
produce high performance polysilicon TFTs using
solution based MIC (SMIC) and defined-grain MIC
(DG-MIC) methods.

Novel post-annealing technologies are also introduced
to reduce the micro-defects in MIC polysilicon film
and hence to achieve better performance. These
technologies include YAG laser post-annealing and
flash lamp post-annealing. Particularly, it is the
first time to report the application of flash lamp
annealing technology in the fabrication of low
temperature polysilicon and TFTs.

Autorentext

Bo Zhang was born in Chengdu, China. He received his B.S. degree
from UESTC (Chengdu), and M.Phil degree from HKUST (Hong Kong),
where he conducted research on novel low-temperature polysilicon
technologies. He is currently working toward the Ph.D degree at
UNSW (Australia), where he is working on the nanostructures for
tandem solar cells.

Klappentext

Nowadays,active-matrix addressing using a-Si TFTs is
dominating in the flat panel display markets.
However, low temperature polysilicon has been
proposed and considered to be a promising alternative
technology. Metal induced crystallization (MIC) is
one of the methods to obtain high quality polysilicon
films at low temperatures.

A few technologies are presented in this monograph,
which improve the quality of MIC polysilicon film and
hence the performance of TFTs built on.

Amelioration of MIC processes has been made to
produce high performance polysilicon TFTs using
solution based MIC (SMIC) and defined-grain MIC
(DG-MIC) methods.

Novel post-annealing technologies are also introduced
to reduce the micro-defects in MIC polysilicon film
and hence to achieve better performance. These
technologies include YAG laser post-annealing and
flash lamp post-annealing. Particularly, it is the
first time to report the application of flash lamp
annealing technology in the fabrication of low
temperature polysilicon and TFTs.