Self-aligned Side Gates for Nanowires and Nanotubes

The book presents the experimental and theoretical
development of a simple to fabricate new control
architecture for nanotubes and nanowires. The
architectures arrangement offers new possibilities
for electrical, magnetic and mechanical control and a
new spin detection architecture with applicability to
quantum computation is presented. The fabrication
procedure allows twin side gate electrodes to be
placed within 5nm of a nanotube. The nanotube is
suspended between the twin gate electrodes and the
suspension creates an air gap between the nanotube
and the gates. The air gap can help when applying
high fields and should reduce noise, shielding and
hysteretic effects. The twin gate structure allows
for high field gradients which can be used to modify
band gaps, while the proximity and dimensions assist
the formation of well-defined tunnel barriers.
Ultimately it is hoped that the architecture will aid
the creation and control of quantum dots and offer
the possibility of extending low dimensional
experiments in GaAs to nanotubes and nanowires.

Autorentext

Luke has held a Research Fellowship at Fitzwilliam College
Cambridge. He has a PhD in Physics from the University of
Cambridge and a First-Class Honours degree from The Australian
National University. His PhD work was awarded a number of prizes
including the De Montfort Medal for Excellence in Science,
Engineering and Technology.

Klappentext

The book presents the experimental and theoretical
development of a simple to fabricate new control
architecture for nanotubes and nanowires. The
architectures arrangement offers new possibilities
for electrical, magnetic and mechanical control and a
new spin detection architecture with applicability to
quantum computation is presented. The fabrication
procedure allows twin side gate electrodes to be
placed within 5nm of a nanotube. The nanotube is
suspended between the twin gate electrodes and the
suspension creates an air gap between the nanotube
and the gates. The air gap can help when applying
high fields and should reduce noise, shielding and
hysteretic effects. The twin gate structure allows
for high field gradients which can be used to modify
band gaps, while the proximity and dimensions assist
the formation of well-defined tunnel barriers.
Ultimately it is hoped that the architecture will aid
the creation and control of quantum dots and offer
the possibility of extending low dimensional
experiments in GaAs to nanotubes and nanowires.