4H-SiC Schottky Barrier Diodes and Junction Field Effect Transistors

Silicon Carbide (SiC) is a semiconductor employed for the fabrication of high power and high frequency electronic devices, with lower power losses and smaller size than their Si or GaAs counterparts. Recently, SiC substrates with a very low defect density, and with a good control on the doping characteristics became commercially available. Due to these technological improvements, the polytype 4H can be exploited in all its potential in order to fabricate Schottky Barrier Diodes (SBDs) and Junction Field Effect Transistors (JFETs). SiC SBDs with 600 V blocking voltage capabilities have been yet commercialized. This device can provide theoretical blocking voltage values as high as 3300 V with low leakage currents, well beyond the performances of the Si based counterpart. In particular, SiC based transistor JFETs can be designed with a vertical structure using the 4H polytype, because of the high values of the on axis mobility. This book provides to the researchers in the field of SiC power devices an introduction to the process techniques commonly employed for the fabrication and characterization of SiC SBDs and JFETs.

Autorentext

Denis Perrone, PhD: Graduated in Materials Science at University of Turin, Italy (2003). PhD in Electronic Devices at Polytechnic of Turin, Italy (2007). Current position: fellowship with the Materials and Microsystem Laboratory (X-lab) of the Polytechnic of Turin.