Wir verwenden Cookies und Analyse-Tools, um die Nutzerfreundlichkeit der Internet-Seite zu verbessern und für Marketingzwecke. Wenn Sie fortfahren, diese Seite zu verwenden, nehmen wir an, dass Sie damit einverstanden sind. Zur Datenschutzerklärung.
Advanced Power Mosfet Concepts
Details
This text offers an in-depth treatment of the physics of operation of advanced power MOSFETs. It provides analytical models for explaining the operation of all advanced power MOSFETs as well as the results of numerical and two-dimensional simulations.
During the last decade many new concepts have been proposed for improving the performance of power MOSFETs. The results of this research are dispersed in the technical literature among journal articles and abstracts of conferences. Consequently, the information is not readily available to researchers and practicing engineers in the power device community. There is no cohesive treatment of the ideas to provide an assessment of the relative merits of the ideas.
"Advanced Power MOSFET Concepts" provides an in-depth treatment of the physics of operation of advanced power MOSFETs. Analytical models for explaining the operation of all the advanced power MOSFETs will be developed. The results of numerical simulations will be provided to give additional insight into the device physics and validate the analytical models. The results of two-dimensional simulations will be provided to corroborate the analytical models and give greater insight into the device operation.
Discusses devices that can have a significant impact on improving the efficiency of the Voltage-Regulator-Modules used to deliver power to Microprocessors and Graphics Chips in Laptops and Servers Covers applications in all lower voltage circuits, especially the automotive electronics area Includes numerical simulation examples to explain the operating physics and validate the models Extensive coverage of the role of silicon carbide in the design and structure of power rectifiers Includes supplementary material: sn.pub/extras
Klappentext
"Advanced Power MOSFET Concepts" provides an in-depth treatment of the physics of operation of advanced power MOSFETs. Analytical models for explaining the operation of all the advanced power MOSFETs are developed and explained. The results of numerical simulations are provided to give additional insight into the device physics and validate the analytical models. The results of two-dimensional simulations are also given, in order to corroborate the analytical models and give further insight into the device operation. This volume also: -Discusses devices that can have a significant impact on improving the efficiency of the voltage-regulator-modules used to deliver power to microprocessors and graphics chips in laptops and servers -Covers applications in all lower voltage circuits, especially the automotive electronics area Includes numerical simulation examples to explain the operating physics and validate the models - Offers extensive coverage of the role of silicon carbide in the design and structure of power rectifiers "Advanced Power MOSFET Concepts" is a must-read for researchers and practicing engineers in the power device industry.
Inhalt
D-MOSFET Structure.- U-MOSFET Structure.- SC-MOSFET Structure.- CC-MOSFET Structure.- GD-MOSFET Structure.- SJ-MOSFET Structure.- Integral Diode.- SiC Planar MOSFET Structures.- Synopsis.
Weitere Informationen
- Allgemeine Informationen
- GTIN 09781441959164
- Anzahl Seiten 562
- Lesemotiv Verstehen
- Genre Wärme- und Energietechnik
- Auflage 2010 edition
- Herausgeber Springer-Verlag GmbH
- Gewicht 1002g
- Größe H243mm x B164mm x T43mm
- Jahr 2010
- EAN 9781441959164
- Format Fester Einband
- ISBN 978-1-4419-5916-4
- Veröffentlichung 07.07.2010
- Titel Advanced Power Mosfet Concepts
- Autor B Jayant Baliga
- Sprache Englisch