Advances in Chemical Mechanical Planarization (CMP)

Advances in Chemical Mechanical Planarization (CMP), Second Edition provides the latest information on a mainstream process that is critical for high-volume, high-yield semiconductor manufacturing, and even more so as device dimensions continue to shrink. The second edition includes the recent advances of CMP and its emerging materials, methods, and applications, including coverage of post-CMP cleaning challenges and tribology of CMP.

This important book offers a systematic review of fundamentals and advances in the area. Part one covers CMP of dielectric and metal films, with chapters focusing on the use of current and emerging techniques and processes and on CMP of various materials, including ultra low-k materials and high-mobility channel materials, and ending with a chapter reviewing the environmental impacts of CMP processes. New content addressed includes CMP challenges with tungsten, cobalt, and ruthenium as interconnect and barrier films, consumables for ultralow topography and CMP for memory devices. Part two addresses consumables and process control for improved CMP and includes chapters on CMP pads, diamond disc pad conditioning, the use of FTIR spectroscopy for characterization of surface processes and approaches for defection characterization, mitigation, and reduction. *Advances in Chemical Mechanical Planarization (CMP), Second Edition* is an invaluable resource and key reference for materials scientists and engineers in academia and R&D.

Autorentext
Babu Suryadevara is distinguished professor and former director of the Center for Advanced Materials Processing (CAMP) at Clarkson University, United States. His research interests include CMP of metal and dielectric films, CMP for shallow-trench isolation, particle-free solutions for CMP, and post-CMP cleaning.

Klappentext

Advances in Chemical Mechanical Planarization (CMP), Second Edition provides the latest information on a mainstream process that is critical for high-volume, high-yield semiconductor manufacturing, and even more so as device dimensions continue to shrink. The second edition includes the recent advances of CMP and its emerging materials, methods, and applications, including coverage of post-CMP cleaning challenges and tribology of CMP.

This important book offers a systematic review of fundamentals and advances in the area. Part one covers CMP of dielectric and metal films, with chapters focusing on the use of current and emerging techniques and processes and on CMP of various materials, including ultra low-k materials and high-mobility channel materials, and ending with a chapter reviewing the environmental impacts of CMP processes. New content addressed includes CMP challenges with tungsten, cobalt, and ruthenium as interconnect and barrier films, consumables for ultralow topography and CMP for memory devices. Part two addresses consumables and process control for improved CMP and includes chapters on CMP pads, diamond disc pad conditioning, the use of FTIR spectroscopy for characterization of surface processes and approaches for defection characterization, mitigation, and reduction.

Advances in Chemical Mechanical Planarization (CMP), Second Edition is an invaluable resource and key reference for materials scientists and engineers in academia and R&D.

Inhalt

Part One - CMP of dielectric and metal films

1. Chemical and physical mechanisms of dielectric chemical mechanical polishing (CMP)

2. Copper chemical mechanical planarization (Cu CMP) challenges in 22 nm back-end-of-line (BEOL) and beyond

3. Electrochemical techniques and their applications for CMP of metal films

4. Ultra-low-k materials and chemical mechanical planarization (CMP)

5. CMP processing of high mobility channel materials - alternatives to Sis

6. Multiscale modeling of chemical mechanical planarization (CMP)

7. Polishing of SiC films

8. Chemical and physical mechanisms of CMP of gallium nitride

9. Abrasive-free and ultra-low abrasive chemical mechanical polishing (CMP) processes

10. Transient copper removal rate phenomena with implications for polishing mechanisms

11. Environmental aspects of planarization processes

    Part Two - Consumables and process control for improved CMP

12. Preparation and characterization of slurry for CMP

13. Chemical metrology methods for CMP quality

14. Diamond disc pad conditioning in chemical mechanical polishing

15. Characterization of surface processes during oxide CMP by in situ FTIR spectroscopy

16. Chemical mechanical polishing (CMP) removal rate uniformity and role of carrier parameters

17. Approaches to defect characterization, mitigation and reduction

18. Challenges and solutions for post-CMP cleaning at device and interconnect levels

19. Applications of chemical mechanical planarization (CMP) to More than Moore devices

20. CMP for phase change materials

21. CMP pads and their performance

22. Latest developments in the understanding of PVA brush related issues during post CMP (pCMP) cleaning