Advances in Scanning Probe Microscopy

This book will be of interest to all those involved in using scanning probe microscopy and will help point the way towards new applications. Of particular interest is the manipulation of single atoms for producing future single-electron devices.

Provides introduction to selected theoretical and experimental aspects of particular current interest in this rapidly developing field Of interest to newcomers and established workers alike

Inhalt
1 Theory of Scanning Probe Microscopy.- 1.1 Introduction.- 1.2 Scanning Tunneling Microscopy.- 1.3 Frictional Force Microscopy.- 1.4 Dynamic-Mode Atomic Force Microscopy.- 1.5 Non-Contact Mode Atomic Force Microscopy.- 1.6 Conclusion.- References.- 2 The Theoretical Basis of Scanning Tunneling Microscopy for Semiconductors First-Principles Electronic Structure Theory for Semiconductor Surfaces.- 2.1 Introduction.- 2.2 Computational Methods.- 2.3 Surface Structures.- 2.4 Surface Dynamics.- References.- 3 Atomic Structure of 6H-SiC (0001) and (000$$\bar{1}$$).- 3.1 Introduction.- 3.2 Surface Preparation.- 3.3 Surface Structure of 6H-SiC (0001) and (000$$\bar{1}$$).- 3.4 Surface Phonons of 6H-SiC (0001).- 3.5 Effect of Surface Polarity for Gallium Adsorption onto 6H-SiC Surfaces.- 3.6 Conclusions.- References.- 4 Application of Atom Manipulation for Fabricating Nanoscale and Atomic-Scale Structures on Si Surfaces.- 4.1 Introduction.- 4.2 Experimental Aspects.- 4.3 Property Changes in the Si(111)?7x7 Surface.- 4.4 Properties of Dangling Bonds on the Si(100)?2x1?H Surface.- 4.5 Interaction of Adsorbates with Dangling Bonds on Si(100)?2x1?H Surfaces and Atomic Wire Fabrication.- 4.6 Conclusion.- References.- 5 Theoretical Insights into Fullerenes Adsorbed on Surfaces: Comparison with STM Studies.- 5.1 Introduction.- 5.2 Fullerene Research Background.- 5.3 Universal Features of C60 and C70 STM Images.- 5.4 Dipole Field Caused by Charge Transfer.- 5.5 Photo-Induced Excited States.- 5.6 Conclusion.- Appendix: All-Electron Mixed Basis Approach.- References.- 6 Apparent Barrier Height and Barrier-Height Imaging of Surfaces.- 6.1 Introduction.- 6.2 Properties of Barrier Height.- 6.3 Measurements of Barrier Height.- 6.4 Barrier-Height Imaging.- 6.5 Applications of BHImaging.- References.- 7 Mesoscopic Work Function Measurement by Scanning Tunneling Microscopy.- 7.1 Introduction.- 7.2 Work Function.- 7.3 Experimental Techniques.- 7.4 Results.- 7.5 Conclusion.- References.- 8 Scanning Tunneling Microscopy of IIIV Compound Semiconductor (001) Surfaces.- 8.1 Introduction.- 8.2 Semiconductor Surface Reconstruction.- 8.3 GaAs(001) As-Rich Surface.- 8.4 GaAs(001) Ga-Rich Surface.- 8.5 Other Arsenide (001) Surfaces.- 8.6 Phosphide, Antimonide and Nitride (001) Surfaces.- 8.7 Conclusions.- References.- 9 Adsorption of Fullerenes on Semiconductor and Metal Surfaces Investigated by Field-Ion Scanning Tunneling Microscopy.- 9.1 Introduction.- 9.2 Experiment.- 9.3 Results and Discussions on Semiconductor Substrates.- 9.4 Results and Discussions on Metal Substrates.- 9.5 Conclusions.- References.