Analysis of III-V Compound-based Quantum Well Transistor

The performance comparison between conventional Bipolar Junction Transistor (BJT) and developed Heterojunction Emitter Bipolar Transistors (HEBT) structure has been completed based on operating frequency, carrier mobility rate and band diagram alignment of which were the critical considered parameters of the evaluation of performance of the semiconductor electronics devices. The results from the analyzes confirm that the developed Emitter Heterojunction Bipolar Transistors (HEBT) structure was met the high performance application in reality. The implementations were accomplished based on physical parameters and the numerical analyzes were completed by MATLAB language.

Autorentext

Hsu Myat Tin Swe received her Bachelor of Engineering Degree in Electronics from Technological University (Taunggyi) in 2015. She got her Master of Engineering (Electronics) degree from Yangon Technological University in 2020. Her research interests are Semiconductor Electronics and Measurement of Semiconductor Quantum Devices.