Analytical and Numerical Studies of Defect Formation in SiC

Improvement of PVT (Physical Vapor Transport) grown
SiC (Silicon Carbide) structural quality is crucial
for the wide commercialization of SiC electronic
devices that feature superior characteristics for
power conditioning and control. This is why, this
publication is devoted to investigation and
development of comprehensive models that can help to
explain, understand and, then, eliminate
formation of various defects in SiC during PVT
growth.

Autorentext
EDUCATION: Ph.D. in Electrical Engineering, May 2002, UNIVERSITY OF SOUTH CAROLINA, Columbia, SC 29208, USA. PROFESSIONAL INTERESTS: Analytical, numerical and experimental studies of SiC PVT grown; Investigation of defect formation during SiC growth; Fabrication and design optimization of noval SiC PVT growth reactors.

Klappentext
Improvement of PVT (Physical Vapor Transport) grown SiC (Silicon Carbide) structural quality is crucial for the wide commercialization of SiC electronic devices that feature superior characteristics for power conditioning and control. This is why, this publication is devoted to investigation and development of comprehensive models that can help to explain, understand and, then, eliminate formation of various defects in SiC during PVT growth.