Basic of Electronic Device and Circuits

The revised syllabus of Sandip University covers PN Junction Devices, including the characteristics of PN junction diodes, temperature dependence, and capacitance aspects. It delves into Zener and Avalanche Breakdown, as well as Diode Rectifiers such as half-wave, full wave, and bridge rectifiers, with a focus on filter types and ripple factor. The study extends to BJT Biasing and Amplifiers, exploring transistor construction, operations, characteristics, and biasing methods. The analysis of CE, CB, and CC amplifiers is included, covering gain, frequency response, and operational characteristics. The syllabus also addresses voltage regulators and the importance of BJT biasing in transistor circuits.

Autorentext

Prof. Shraddha N. Zanjat jest adiunktem na Wydziale Elektrotechniki i Elektroniki Uniwersytetu Sandip w Nashik. Posiada ponad 10-letnie do wiadczenie w nauczaniu, tytu magistra technologii uzyskany na Uniwersytecie RTMN oraz jest w trakcie uzyskiwania tytu u doktora. Opublikowäa artyku y naukowe, posiada patenty na projekty i prawa autorskie oraz jest autork ponad 50 ksi ek.