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Bipolar Junction Transistor
CHF 56.55
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SKU
B2UFVITO3QE
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Geliefert zwischen Fr., 30.01.2026 und Mo., 02.02.2026
Details
A bipolar (junction) transistor (BJT) is a three-terminal electronic device constructed of doped semiconductor material and may be used in amplifying or switching applications. Bipolar transistors are so named because their operation involves both electrons and holes. Charge flow in a BJT is due to bidirectional diffusion of charge carriers across a junction between two regions of different charge concentrations. This mode of operation is contrasted with unipolar transistors, such as field-effect transistors, in which only one carrier type is involved in charge flow due to drift. By design, most of the BJT collector current is due to the flow of charges injected from a high-concentration emitter into the base where they are minority carriers that diffuse toward the collector, and so BJTs are classified as minority-carrier devices.
Weitere Informationen
- Allgemeine Informationen
- GTIN 09786130203948
- Editor Frederic P. Miller, Agnes F. Vandome, John McBrewster
- Sprache Englisch
- Genre Technik
- Anzahl Seiten 128
- Größe H220mm x B150mm x T8mm
- Jahr 2009
- EAN 9786130203948
- Format Fachbuch
- ISBN 978-613-0-20394-8
- Titel Bipolar Junction Transistor
- Untertitel Doping (semiconductor), Semiconductor, Electronic amplifier, Electron, Electron hole, Molecular diffusion, Field- effect transistor, Drift velocity, Charge carriers in semiconductors, Early effect
- Gewicht 207g
- Herausgeber Alphascript Publishing
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