Charge Plasma Induced Double Gate TFET as Biosensor

This book presents a groundbreaking Dual Metal Double Gate Tunnel Field Effect Transistor (DM DG TFET) featuring a laterally divided dielectric gate oxide structure with a tunneling and auxiliary gate. By engineering gate oxides and work functions, the device achieves a sub-threshold swing below 90 mV/decade, high current ratio, and ultra-low OFF current. It explores the role of high-k dielectrics, doping, and gate potentials in optimizing performance. The research further introduces a charge plasma-based TFET for label-free biomolecule detection, demonstrating exceptional drain sensitivity and RF response. A Heterojunction Ferroelectric Charge Plasma TFET design enhances switching speed and biosensing accuracy. Bridging innovation with simulation, this work establishes TFETs as key components for next-generation electronics and biosensing technologies.

Autorentext
Dr. Dipshika Das received her B.Tech. and M.Tech. in Electronics and Communication Engineering and completed her Ph.D. at NIT Mizoram. Since 2011, she has been an Assistant Professor at Techno International New Town, Kolkata. Her research focuses on TFET design, simulation, and applications in low-power devices.