Charge-Trapping Non-Volatile Memories

This book describes the technology of charge-trapping non-volatile memories and their uses. The authors explain the device physics of each device architecture and provide a concrete description of the materials involved and the fundamental properties of the technology. Modern material properties, used as charge-trapping layers, for new applications are introduced.Provides a comprehensive overview of the technology for charge-trapping non-volatile memories;Details new architectures and current modeling concepts for non-volatile memory devices;Focuses on conduction through multi-layer gate dielectrics stacks.

Provides a comprehensive overview of the technology for charge-trapping non-volatile memories Details new architectures and current modeling concepts for non-volatile memory devices Focuses on conduction through multi-layer gate dielectrics stacks Includes supplementary material: sn.pub/extras

Autorentext
Panagiotis Dimitrakis is at the Institute of Advanced Materials Physicochemical Processes Nanotechnology & Microsystems at the National Centre for Scientific Research, Greece.

Inhalt
Materials and Device Reliability in SONOS Memories.- Charge-Trap-Non-Volatile Memory and Focus on Flexible Flash Memory Devices.- Hybrid Memories Based on Redox Molecules.- Organic Floating-Gate Memory Structures.- Nanoparticles Based Flash-like Non Volatile Memories: Cluster Beam Synthesis of Metallic Nanoparticles and Challenges for the Overlying Control Oxide Layer.