Compact Modeling of the RF and Noise Behavior of Multiple-Gate MOSFETs

The nanoelectronics world is moving forward at incredible speed, and technology keeps improving overnight. One can no longer afford to spend months or even years evaluating a future technological node, thus the need for a robust evaluation system has arisen. Numerical ways of modeling the new device architectures, apart from precision, offer very little in terms of performance, and are being replaced by new analytical tools, focus on providing exactly that - speed and accuracy. This work has been conceived to cover precisely these aspects. The models described here are physical models, with very few adjustment parameters, that are usually replaceable with values extracted from experimental measurements. They have the advantage of being easily incorporated into circuit simulators, which allow designers to unleash the full capabilities of the design software to create new devices and applications.

Autorentext

Bogdan Mihai Nae was born in Romania in 1980. He received the M.S. and Ph.D. degrees in Microelectronics from Universitat Rovira i Virgili (URV), Tarragona, Spain, in 2007 and 2011 respectively. His research interests focus on compact modeling and simulation of advanced electron devices, in particular nanoscale multi-gate MOSFETs.