Comparison between Boron and Phosphorus diffusion profiles in MOS tran

CHF 49.15
Auf Lager
SKU
TFK6ESS1KCT
Stock 1 Verfügbar
Shipping Kostenloser Versand ab CHF 50
Geliefert zwischen Mo., 13.10.2025 und Di., 14.10.2025

Details

Dopant diffusion in semiconductors is a very important in process step of device. diffusion has a great influence on the electrical and electronic properties especially in the lacunary and interstitial mechanismis. This chapter investigates the diffusion of P and B in Si. The profiles have been simulated using Secondary Ion Mass Spectrometry (SIMS) modele [1,2]. In the process for manufacturing MOS transistor, the manufacturers follow basically three steps. The starting substrate is a monocrystalline silicon wafer. The first step consists in producing the polysilicon gate on a thin layer of SiO2 followed by implantation (boron) of the gate. The second step is the training of source-drain junctions by ion implantation to high dose (= 10 15 at / cm2) and the third is to silicide the source-drain junctions for reduce the contact resistance. One of the most promising silicides is the monosilicide of nickel (NiSi). therefore, it is very important to understand the redistribution of dopants in the different active parts of a transistor by studying the following points: - The redistribution of boron in polycrystalline silicon (gate), - The redistribution of boron in the monocrystal

Autorentext

Teacher at university (Algeria).

Cart 30 Tage Rückgaberecht
Cart Garantie

Weitere Informationen

  • Allgemeine Informationen
    • Sprache Französisch
    • Titel Comparison between Boron and Phosphorus diffusion profiles in MOS tran
    • Veröffentlichung 08.05.2019
    • ISBN 6138487699
    • Format Kartonierter Einband
    • EAN 9786138487692
    • Jahr 2019
    • Größe H220mm x B150mm x T4mm
    • Autor Naima Guenifi , Ramdane Mahamdi , Ibrahim Rahmani
    • Gewicht 96g
    • Anzahl Seiten 52
    • Herausgeber Éditions universitaires européennes
    • GTIN 09786138487692

Bewertungen

Schreiben Sie eine Bewertung
Nur registrierte Benutzer können Bewertungen schreiben. Bitte loggen Sie sich ein oder erstellen Sie ein Konto.