Design and Simulation of Trench Gate Power MOSFET

Trench gate power MOSFETs are the best suited devices for low to medium voltage power applications, like microprocessor power supplies, LED display drivers and automobiles etc. The main figures of merit of a power device are its ON-state resistance, breakdown voltage, switching delays and the power consumed during its operation. All these parameters are interlinked by the technology and the physics behind its operation. In this work such problems have been studied systematically and several methods have been proposed to overcome these limitations in a trench gate power MOSFET by improving its basic structure and are verified by the 2D numerical simulations using industry standard TCAD tools.

Autorentext

R. S. Saxena has completed his Ph.D. degree from IIT Delhi, India in 2012. Since 1998 he has been a scientist at SSPL, Delhi, India, working on the design, modeling, and testing of IR detectors and their readout circuits. His field of interest is modeling and testing of semiconductor devices. He has published about 45 papers in the above fields.