Design of RF CMOS Low Noise Amplifiers

Design of RF CMOS Low Noise Amplifiers presents the results of research on a gain-boosted common-gate RF low noise amplifier (LNA) in CMOS technology. The book covers noise analysis, design techniques, prototyping of the LNA, as well as broadband modeling for on-chip spiral differential inductors. Beginning with a technical review of LNA architectures and inductor modeling techniques, the authors then introduce a scalable lumped circuit model for octagonal differential inductors. The effect of high frequency current crowding, i.e. proximity effect, is taken into consideration in the lumped circuit model. Subsequently, the book offers comprehensive noise analysis of the LNA and discusses design techniques for noise reduction. Measurement results for a 2.4GHz CMOS LNA and conclusions are included. The book is intended for anyone who is interested in learning essentials of RF CMOS LNA design and basic mathematics of on-chip inductor broadband modeling. The book is also beneficial to engineers and researchers in CMOS RFIC design especially for WLAN, Bluetooth, and emerging wireless communication applications.

Autorentext

Changgui Lin, Ph.D., is a Scientist at Broadcom Corporation. Thottam S. Kalkur, Ph.D., is a Professor and Chair of Electrical Engineering Department,University of Colorado at Colorado Springs. Marc Morin, MSEE, is a Principal Design Engineer at EM-Microelectronic in Colorado Springs.