Development, Design and Analysis of Type-II Hetero-Strained Nanosystem

This book investigates the advancement and analysis of strained channel cylindrical gate-all-around (CGAA) FETs. The study explores a nano-scale design incorporating three ultrathin strained layers: two outer layers of strained silicon (s-Si) and a middle layer of strained silicon germanium (s-SiGe), forming a heterostructure-on-insulator (HOI) within the CGAA FET. These strained layers in the channel effectively confine quantum carriers, thereby enhancing carrier mobility and reducing threshold voltage roll-off.

Autorentext

Rasmita Barik received her Ph.D. in Electronics and Communication Engineering from the National Institute of Technology (NIT) Mizoram, India, in 2024. She is currently associated with Shree Ram Swaroop University, Uttar Pradesh, India. Her research interests include nanoelectronic devices and VLSI, with a particular focus on the design.