Device modelling and characterisation of Hybrid devices

In low-power-high-speed electronic circuits, devices with steeper characteristics are required. The device's speed increases with steeper IV characteristics, and low power is achieved through operating the device in the subthreshold region. The measurement of currents in the subthreshold region is a big challenge. To achieve high switching, we need to propose a new device with the combined advantages of FinFET and TFET. This thesis proposed a hybrid device with an SS value < 25 mV/Dec. Synopsis Centaurus TCAD is used in this thesis for device modelling and characterisation.

Autorentext

Dr. Ajay Kumar Dharmireddy completed a PhD from GITAM University. M.Tech in VLSI Design from Bannari Amman Institute of Technology, Sathyamagalam. B.Tech degree from BVCIT&S, Amalapuram, affiliated with JNTUH, and presently working as an Associate Professor in SIR.C.R. Reddy College of Engineering, Eluru, Andhra Pradesh.