Diamond-Shaped Body Contact for Silicon on Insulator MOSFET

Analog circuit design based on partially-depleted (PD) Silicon-on-Insulator (SOI) MOSFET requires body-contacted devices in order to avoid floating body effects and the resulting body voltage mismatch. In this book, a simple and high performance diamond-shaped body contact (DSBC) for PD SOI devices is presented. Two and three-dimensional device simulation are used to demonstrate the performance functionality of the body contact. DSBC devices are designed using standard layers in 0.35 micron PD SOI MOSFET process. Experimental characterization of the fabricated DSBC structures confirms the efficiency of the new contact in floating body suppression and current drive capability. The new body contact structure is applicable to both low- and high-voltage SOI and bulk devices.

Autorentext

He received B.Sc. degree from IUT, Isfahan, Iran, in 1994, and Ph.D. degree from Washington State University in 2003. He later joined Intel Corp., Hillsboro, OR. His research interests include SOI microelectronic devices and circuits. Dr. Daghighi is currently an Assistant Professor of Electrical Engineering at Shahrekord University, Iran.