Electric-Double-Layer Coupled Oxide-Based Neuromorphic Transistors Studies
Details
This book focuses on essential synaptic plasticity emulations and neuromorphic computing applications realized with the aid of three-terminal synaptic devices based on ion-coupled oxide-based electric-double-layer (EDL) transistors.
To replicate the robust, plastic and fault-tolerant computational power of the human brain, the emulation of essential synaptic plasticity and computation of neurons/synapse by electronic devices are generally considered to be key steps. The book shows that the formation of an EDL at the dielectric/channel interface that slightly lags behind the stimuli can be attributed to the electrostatic coupling between ions and electrons; this mechanism underlies the emulation of short-term synaptic behaviors. Furthermore, it demonstrates that electrochemical doping/dedoping processes in the semiconducting channel by penetrated ions from electrolyte can be utilized for the emulation of long-term synaptic behaviors. Lastly, it applies these synaptic transistors in an artificial visual system to demonstrate the potential for constructing neuromorphic systems. Accordingly, the book offers a unique resource on understanding the brain-machine interface, brain-like chips, artificial cognitive systems, etc.
Nominated as an excellent doctoral dissertation by the University of Chinese Academy of Sciences Reports, for the first time as a PhD thesis, on essential synaptic plasticity emulations and neuromorphic computing applications realized with the aid of three-terminal synaptic devices Introduces readers to the design, fabrication, characterization and modeling of synaptic devices Demonstrates the potential applications of synaptic devices in neuromorphic systems
Inhalt
Introduction.- Fabrications and characterizations of oxide-based EDL transistors.- Synaptic emulations based on oxide-based EDL transistors.- Neuromorphic computing applications based on oxide-based EDL transistors.- Summary and prospect. <p
Weitere Informationen
- Allgemeine Informationen
- GTIN 09789811333132
- Genre Elektrotechnik
- Auflage 1st edition 2019
- Sprache Englisch
- Lesemotiv Verstehen
- Anzahl Seiten 132
- Größe H241mm x B160mm x T13mm
- Jahr 2019
- EAN 9789811333132
- Format Fester Einband
- ISBN 9811333130
- Veröffentlichung 05.02.2019
- Titel Electric-Double-Layer Coupled Oxide-Based Neuromorphic Transistors Studies
- Autor Changjin Wan
- Untertitel Springer Theses
- Gewicht 371g
- Herausgeber Springer Nature Singapore