Electric-Double-Layer Coupled Oxide-Based Neuromorphic Transistors Studies

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This book focuses on essential synaptic plasticity emulations and neuromorphic computing applications realized with the aid of three-terminal synaptic devices based on ion-coupled oxide-based electric-double-layer (EDL) transistors.

To replicate the robust, plastic and fault-tolerant computational power of the human brain, the emulation of essential synaptic plasticity and computation of neurons/synapse by electronic devices are generally considered to be key steps. The book shows that the formation of an EDL at the dielectric/channel interface that slightly lags behind the stimuli can be attributed to the electrostatic coupling between ions and electrons; this mechanism underlies the emulation of short-term synaptic behaviors. Furthermore, it demonstrates that electrochemical doping/dedoping processes in the semiconducting channel by penetrated ions from electrolyte can be utilized for the emulation of long-term synaptic behaviors. Lastly, it applies these synaptic transistors in an artificial visual system to demonstrate the potential for constructing neuromorphic systems. Accordingly, the book offers a unique resource on understanding the brain-machine interface, brain-like chips, artificial cognitive systems, etc.



Nominated as an excellent doctoral dissertation by the University of Chinese Academy of Sciences Reports, for the first time as a PhD thesis, on essential synaptic plasticity emulations and neuromorphic computing applications realized with the aid of three-terminal synaptic devices Introduces readers to the design, fabrication, characterization and modeling of synaptic devices Demonstrates the potential applications of synaptic devices in neuromorphic systems

Inhalt
Introduction.- Fabrications and characterizations of oxide-based EDL transistors.- Synaptic emulations based on oxide-based EDL transistors.- Neuromorphic computing applications based on oxide-based EDL transistors.- Summary and prospect. <p

Weitere Informationen

  • Allgemeine Informationen
    • GTIN 09789811333132
    • Genre Elektrotechnik
    • Auflage 1st edition 2019
    • Sprache Englisch
    • Lesemotiv Verstehen
    • Anzahl Seiten 132
    • Größe H241mm x B160mm x T13mm
    • Jahr 2019
    • EAN 9789811333132
    • Format Fester Einband
    • ISBN 9811333130
    • Veröffentlichung 05.02.2019
    • Titel Electric-Double-Layer Coupled Oxide-Based Neuromorphic Transistors Studies
    • Autor Changjin Wan
    • Untertitel Springer Theses
    • Gewicht 371g
    • Herausgeber Springer Nature Singapore

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