Electrical Properties of n-GaN based MOS type Schottky Junctions

III-nitride semiconductor materials, specially gallium nitride (GaN), have attracted significantly in the fabrication of high power, high frequency and high temperature devices such as metal/oxide/semiconductor field effect transistors (MOSFETS), heterojunction field effect transistors (HFET's) and high electron mobility transistors (HEMT's). However, metal/semiconductor (MS) junctions in these devices may suffer from high leakage-current and low break-down voltage, which limits the device performance, reliability and stability. This could restrain by employing a thin insulator/interlayer between the metal and semiconductor. The formation of high-quality Schottky junctions with low-leakage current and low ideality factor by insertion of a thin insulator/interlayer in the middle of the metal and semiconductor is challenging task. Hence, the detailed investigations are prerequisite on the formation of a thin insulator/interlayer in the middle of the metal and semiconductor to achieve high barrier height with low ideality factor and good thermal stability.

Autorentext
Prasad, Dr. Chowdam Venkata C. Venkata Prasad completed Ph.D. degree at the Department of Physics, Sri Venkateswara University, Tirupati. He has published 6 research articles in reputed international journals. His current research interest is fabrication of MIS/MOS Schottky contacts on III-V Semiconductors such as GaN, GaAs and InP.