Electrical Resistivity Studies on Metal Chalcogenide Semiconductors

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Details

Semiconductors are the unacknowledged pillars of modern technology. During the last decade, semiconducting layered metal dichalcogenides are emerging as promising materials for a wide range of applications in optoelectronics and transistor technology. Because of these, knowledge of their electrical properties under conditions of variable temperature or pressure is important for such applications. Moreover, the exploration of matter at extreme conditions is a central theme in a broad range of scientific disciplines (e.g. material science chemistry, physics, and Earth and planetary science). Looking to these aspects, this book describes different method for crystal growth, experimental high pressure generation method, magnetoresistance studies and electrical resistivity measurement of metal chalcogenides at high pressure and low temperature.

Autorentext

Dr. Sandip V. Bhatt has completed his Ph.D. (2014) in the field of Experimental Condensed Matter Physics from Department of Physics, Sardar Patel University, Vallabh Vidyanagar, Gujarat, INDIA. His area of expertise includes: Crystal Growth, Synthesis and characterization of Nanostructure Materials, High Pressure research and Enhanced Oil Recovery.

Weitere Informationen

  • Allgemeine Informationen
    • GTIN 09783659909276
    • Genre Physics
    • Anzahl Seiten 92
    • Herausgeber LAP LAMBERT Academic Publishing
    • Größe H220mm x B150mm
    • Jahr 2016
    • EAN 9783659909276
    • Format Kartonierter Einband
    • ISBN 978-3-659-90927-6
    • Titel Electrical Resistivity Studies on Metal Chalcogenide Semiconductors
    • Autor Sandip V. Bhatt , Bindiya H. Soni , Milind P. Deshpande
    • Untertitel At High Pressure and Low Temperature
    • Sprache Englisch

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