Electrostatic doping in novel materials

In this book we present the investigation of
electrostatic doping in a wide variety of novel
materials incorporated in field-effect transistors
(FETs), including polymers, organic
molecular crystals, graphene and bilayer graphene.
These studies have lead to substantial
advances in our current understanding of these
materials. Specifically, we performed the first
infrared (IR) imaging of the accumulation layer in
poly(3-hexylthiophene) (P3HT)
FETs. Furthermore, we found that charge carriers in
molecular orbital bands with light
mass dominate the transport properties of single
crystal rubrene. More recently, we
explored the IR absorption of graphene and found
several signatures of many-body
interactions. Moreover, we discovered an asymmetric
band structure in bilayer graphene
and determined the band parameters with an accuracy
never achieved before. Our work
has demonstrated that IR spectroscopy is uniquely
suited for probing the electronic
excitations in nanometer-thick accumulation layers in
FET devices.

Autorentext

Post-doctorial researcher, Department of Physics, Columbia University.Education:Ph.D. Physics, University of California, San Diego, USA (2008);M.S. Physics, University of California, San Diego, USA (2004);B.S. Physics, Peking University, P.R. China (2002).

Klappentext

In this book we present the investigation ofelectrostatic doping in a wide variety of novelmaterials incorporated in field-effect transistors(FETs), including polymers, organicmolecular crystals, graphene and bilayer graphene.These studies have lead to substantialadvances in our current understanding of thesematerials. Specifically, we performed the firstinfrared (IR) imaging of the accumulation layer inpoly(3-hexylthiophene) (P3HT)FETs. Furthermore, we found that charge carriers inmolecular orbital bands with lightmass dominate the transport properties of singlecrystal rubrene. More recently, weexplored the IR absorption of graphene and foundseveral signatures of many-bodyinteractions. Moreover, we discovered an asymmetricband structure in bilayer grapheneand determined the band parameters with an accuracynever achieved before. Our workhas demonstrated that IR spectroscopy is uniquelysuited for probing the electronicexcitations in nanometer-thick accumulation layers inFET devices.