Elements of Electromigration

In this invaluable resource for graduate students and practicing professionals, Tu and Liu provide a comprehensive account of electromigration and give a practical guide on how to manage its effects in microelectronic devices, especially newer devices that make use of 3D architectures.

Autorentext

King-Ning Tu is Professor Emeritus at UCLA and Chair Professor of Materials and Electrical Engineering of City University of Hong Kong. Professor Tu received his BSc degree from National Taiwan University, MSc degree from Brown University, and PhD degree on applied physics from Harvard University in 1960, 1964, and 1968, respectively. Professor Tu is a world leader in the science of thin films, especially in their applications in microelectronic devices, packaging, and reliability.

Dr. Yingxia Liu is an Assistant Professor at City University of Hong Kong. Dr. Liu received her Ph.D. from the Department of Materials Science and Engineering, University of California, Los Angeles in 2016 and her Bachelor's degree from the College of Chemistry and Molecular Engineering, Peking University in 2012.

Inhalt

1. Introduction 2. Driving forces of electromigration 3. Kinetics of electromigration 4. Damage of electromigration 5. Irreversible processes 6. Effect of stress on electromigration 7. Effect of current crowding on electromigration 8. Effect of Joule heating on electromigration 9. Effect of Oxidation on Electromigration 10. Modified Mean-Time-to-Failure Equations