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Emerging Non-Volatile Memories
Details
This book is an introduction to the fundamentals of emerging non-volatile memories and provides an overview of future trends in the field. Readers will find coverage of seven important memory technologies, including Ferroelectric Random Access Memory (FeRAM), Ferromagnetic RAM (FMRAM), Multiferroic RAM (MFRAM), Phase-Change Memories (PCM), Oxide-based Resistive RAM (RRAM), Probe Storage, and Polymer Memories. Chapters are structured to reflect diffusions and clashes between different topics. Emerging Non-Volatile Memories is an ideal book for graduate students, faculty, and professionals working in the area of non-volatile memory.
This book also:
Covers key memory technologies, including Ferroelectric Random Access Memory (FeRAM), Ferromagnetic RAM (FMRAM), and Multiferroic RAM (MFRAM), among others.
Provides an overview of non-volatile memory fundamentals.
Broadens readers' understanding of future trends in non-volatile memories.
Provides an overview of non-volatile memory fundamentals Covers key memory technologies Written by experts from both academia and industry
Inhalt
Part I: Ferroic Memories.- Review of the Science and Technology for Low and High-density Non-volatile Ferroelectric Memories.- Hybrid CMOS/magnetic memories (MRAM) and logic circuits.- Emerging Multi-Ferroic Memories.- Part II: Resistance and Phase Change Memories.- Phase-Change Materials for Data Storage Applications.- Emerging Oxide Resistance Change Memories.- Oxide based memristive nanodevices.- Part III: Probe Memories.- Ferroelectric Probe Storage Devices.
Weitere Informationen
- Allgemeine Informationen
- GTIN 09781489975362
- Genre Elektrotechnik
- Auflage 2014
- Editor Seungbum Hong, Dirk Wouters, Orlando Auciello
- Sprache Englisch
- Lesemotiv Verstehen
- Anzahl Seiten 288
- Größe H241mm x B160mm x T22mm
- Jahr 2014
- EAN 9781489975362
- Format Fester Einband
- ISBN 1489975365
- Veröffentlichung 19.11.2014
- Titel Emerging Non-Volatile Memories
- Gewicht 600g
- Herausgeber Springer US