Fabrication and Characterization of ZnO Nanowire Transistors

Recently, a variety of physical and chemical
methods have been used to synthesize and obtain 1-
dimensional semiconductor nanostructures. For the
cause of easier nanostructure formation and device
applications, we begin this study with the
investigation in growth mechanism and well-
controlled condition to synthesize 1-dimensional ZnO
nanowires.
For the low dimensional structure of nanowire,
the manipulation of individual nanowire has become
an unsettled and crucial issue. Therefore, we use a
printing method to realize the nanowire alignment in
broad classes. In addition, our investigators would
explore the correlation between the quality of 1-
dimensional material and electronic transport
properties of ZnO nanowire-based transistors.
In the fabrication of nanowire transistors, the
existing common method of dielectrophoresis (DEP)
process would impose a contact problem, and an
additional or subsequent metallization is necessary
for the electronic connection. Therefore, we will
develop a novel method to simultaneously obtain
aligned nanowire arrays and device pattering by
combining DEP and imprinting processes.

Autorentext
Master: Majored in Chemical Engineering at
National Cheng Kung University, Tainan, Taiwan.
Graduate Representative of Dept. of Chemical Engineering in
Graduate School.

Klappentext
Recently, a variety of physical and chemical methods have been used to synthesize and obtain 1- dimensional semiconductor nanostructures. For the cause of easier nanostructure formation and device applications, we begin this study with the investigation in growth mechanism and well- controlled condition to synthesize 1-dimensional ZnO nanowires. For the low dimensional structure of nanowire, the manipulation of individual nanowire has become an unsettled and crucial issue. Therefore, we use a printing method to realize the nanowire alignment in broad classes. In addition, our investigators would explore the correlation between the quality of 1- dimensional material and electronic transport properties of ZnO nanowire-based transistors. In the fabrication of nanowire transistors, the existing common method of dielectrophoresis (DEP) process would impose a contact problem, and an additional or subsequent metallization is necessary for the electronic connection. Therefore, we will develop a novel method to simultaneously obtain aligned nanowire arrays and device pattering by combining DEP and imprinting processes.