Ferroelectricity in Doped Hafnium Oxide

Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices covers all aspects relating to the structural and electrical properties of HfO2 and its implementation into semiconductor devices, including a comparison to standard ferroelectric materials. The ferroelectric and field-induced ferroelectric properties of HfO2-based films are considered promising for various applications, including non-volatile memories, negative capacitance field-effect-transistors, energy storage, harvesting, and solid-state cooling. Fundamentals of ferroelectric and piezoelectric properties, HfO2 processes, and the impact of dopants on ferroelectric properties are also extensively discussed in the book, along with phase transition, switching kinetics, epitaxial growth, thickness scaling, and more.

Additional chapters consider the modeling of ferroelectric phase transformation, structural characterization, and the differences and similarities between HFO2 and standard ferroelectric materials. Finally, HfO2 based devices are summarized.

Autorentext
Uwe Schroeder has been Deputy Scientific Director at NaMLab in Dresden, Germany, since 2009. His primary research focuses include material properties of ferroelectric hafnium oxide and the integration of the material into future devices. As a project manager, he researched high-k dielectrics and their integration into DRAM capacitors, and it was during this work that the previously unknown ferroelectric properties of doped HfO2-based dielectrics were discovered. He has focused on a detailed understanding of these new material properties and their integration into memory devices ever since. Cheol Seong Hwang has been a Professor in the Department of Materials Science and Engineering at Seoul National University, Korea, since 1998. He is a recipient of the Alexander von Humboldt fellowship award, the 7th Presidential Young Scientist Award of the Korean government, and AP Faculty Excellence Award, Air Products, USA. His interests include high-k gate oxide, DRAM capacitors, new memory devices including RRAM/PRAM, ferroelectric materials and devices, and thin-film transistors.

Hiroshi Funakubo is a Professor of the Department of Materials Science and Engineering, Tokyo Institute of Technology, Tokyo, Japan. He received the Richard M. Fulrath Award from the American Ceramic Society in 2008. His specific areas of interest include the preparation and properties of dielectric, ferroelectric, and piezoelectric films.

Inhalt

1. Fundamentals of Ferroelectric and piezoelectric properties
2. HfO2 processes
3. Dopant screening for optimization of the ferroelectric properties
4. Electrode screening for capacitor applications
5. Phase transition
6. Switching kinetics
7. Impact of oxygen vacancies
8. Epitaxial growth of ferroelectric HfO2
9. Thickness scaling Chapter
10. Simulation/Modelling
11. Structural characterization on a nanometer scale: PFM, TEM
12. Comparison to standard ferroelectric materials
13. FE HfO2 based devices