Field-effect transistor
CHF 43.05
Auf Lager
SKU
TLMD3JE2BIR
1 Verfügbar 
Kostenloser Versand ab CHF 50
Geliefert zwischen Mo., 03.11.2025 und Di., 04.11.2025
Details
The field-effect transistor (FET) relies on an electric field to control the shape and hence the conductivity of a channel of one type of charge carrier in a semiconductor material. FETs are sometimes called unipolar transistors to contrast their single-carrier-type operation with the dual-carrier-type operation of bipolar (junction) transistors (BJT). The concept of the FET predates the BJT, though it was not physically implemented until after BJTs due to the limitations of semiconductor materials and the relative ease of manufacturing BJTs compared to FETs at the time.
30 Tage Rückgaberecht
GarantieWeitere Informationen
- Allgemeine Informationen
- GTIN 09786130271732
- Anzahl Seiten 88
- Genre Wärme- und Energietechnik
- Editor Frederic P. Miller, Agnes F. Vandome, John McBrewster
- Herausgeber Alphascript Publishing
- Gewicht 147g
- Größe H220mm x B150mm x T5mm
- Jahr 2009
- EAN 9786130271732
- Format Fachbuch
- ISBN 978-613-0-27173-2
- Titel Field-effect transistor
- Untertitel Transistor, Electric field, Electrical conductivity, Charge carrier, Semiconductor, Bipolar junction transistor, History of the transistor, Chemical field-effect transistor, MOSFET
- Sprache Englisch
Bewertungen
Schreiben Sie eine Bewertung
