FinFETs and Other Multi-Gate Transistors

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This book explains the physics and properties of multi-gate field-effect transistors (MuGFETs), how they are made and how circuit designers can use them to improve the performances of integrated circuits. It covers the emergence of quantum effects due to the reduced size of the devices and describes the evolution of the MOS transistor from classical structures to SOI (silicon-on-insulator) and then to MuGFETs.

FinFETs and Other Multi-Gate Transistors provides a comprehensive description of the physics, technology and circuit applications of multigate field-effect transistors (FETs). It explains the physics and properties of these devices, how they are fabricated and how circuit designers can use them to improve the performances of integrated circuits.

The International Technology Roadmap for Semiconductors (ITRS) recognizes the importance of these devices and places them in the "Advanced non-classical CMOS devices" category. Of all the existing multigate devices, the FinFET is the most widely known.

FinFETs and Other Multi-Gate Transistors is dedicated to the different facets of multigate FET technology and is written by leading experts in the field.


Explains the physics and properties of MuGFET devices, how they are made and how circuit designers can use them to improve the performances of integrated circuits Covers the emergence of quantum effects and novel electrical transport phenomena due to the reduced size of the devices Describes the evolution of the MOS transistor from classical structures to SOI (silicon-on-insulator) and then to MuGFETs Presents descriptions of the technological challenges and options, including a physically based compact model

Klappentext

FinFETs and Other Multi-Gate Transistors provides a comprehensive description of the physics, technology and circuit applications of multigate field-effect transistors (FETs). It explains the physics and properties of these devices, how they are fabricated and how circuit designers can use them to improve the performances of integrated circuits.

The International Technology Roadmap for Semiconductors (ITRS) recognizes the importance of these devices and places them in the "Advanced non-classical CMOS devices" category. Of all the existing multigate devices, the FinFET is the most widely known.

FinFETs and Other Multi-Gate Transistors is dedicated to the different facets of multigate FET technology and is written by leading experts in the field.


Inhalt
The SOI MOSFET: from Single Gate to Multigate.- Multigate MOSFET Technology.- BSIM-CMG: A Compact Model for Multi-Gate Transistors.- Physics of the Multigate MOS System.- Mobility in Multigate MOSFETs.- Radiation Effects in Advanced Single- and Multi-Gate SOI MOSFETs.- Multi-Gate MOSFET Circuit Design.

Weitere Informationen

  • Allgemeine Informationen
    • GTIN 09780387717517
    • Genre Elektrotechnik
    • Auflage 2008
    • Editor J. -P. Colinge
    • Sprache Englisch
    • Lesemotiv Verstehen
    • Anzahl Seiten 360
    • Größe H241mm x B160mm x T25mm
    • Jahr 2007
    • EAN 9780387717517
    • Format Fester Einband
    • ISBN 038771751X
    • Veröffentlichung 26.11.2007
    • Titel FinFETs and Other Multi-Gate Transistors
    • Untertitel Series on Integrated Circuits and Systems, Integrated Circuits and Systems
    • Gewicht 705g
    • Herausgeber Springer US

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