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FinFETs and Other Multi-Gate Transistors
Details
This book explains the physics and properties of multi-gate field-effect transistors (MuGFETs), how they are made and how circuit designers can use them to improve the performances of integrated circuits. It covers the emergence of quantum effects and novel electrical transport phenomena due to the reduced size of the devices. In addition, this book describes the evolution of the MOS transistor from classical structures to SOI (silicon-on-insulator) and then to MuGFETs. It includes descriptions of the technological challenges and options, including a physically based compact model, that are presented by these devices. It also describes the most advanced models of MuGFET properties based on quantum modeling as well as other MuGFET applications that include advanced circuits and radiation-hard electronic devices.
Explains the physics and properties of MuGFET devices, how they are made and how circuit designers can use them to improve the performances of integrated circuits Covers the emergence of quantum effects and novel electrical transport phenomena due to the reduced size of the devices Describes the evolution of the MOS transistor from classical structures to SOI (silicon-on-insulator) and then to MuGFETs Presents descriptions of the technological challenges and options, including a physically based compact model
Klappentext
FinFETs and Other Multi-Gate Transistors provides a comprehensive description of the physics, technology and circuit applications of multigate field-effect transistors (FETs). It explains the physics and properties of these devices, how they are fabricated and how circuit designers can use them to improve the performances of integrated circuits.
The International Technology Roadmap for Semiconductors (ITRS) recognizes the importance of these devices and places them in the "Advanced non-classical CMOS devices" category. Of all the existing multigate devices, the FinFET is the most widely known.
FinFETs and Other Multi-Gate Transistors is dedicated to the different facets of multigate FET technology and is written by leading experts in the field.
Inhalt
The SOI MOSFET: from Single Gate to Multigate.- Multigate MOSFET Technology.- BSIM-CMG: A Compact Model for Multi-Gate Transistors.- Physics of the Multigate MOS System.- Mobility in Multigate MOSFETs.- Radiation Effects in Advanced Single- and Multi-Gate SOI MOSFETs.- Multi-Gate MOSFET Circuit Design.
Weitere Informationen
- Allgemeine Informationen
- GTIN 09781441944092
- Genre Elektrotechnik
- Auflage Softcover reprint of hardcover 1st edition 2008
- Editor J. -P. Colinge
- Sprache Englisch
- Lesemotiv Verstehen
- Anzahl Seiten 356
- Größe H235mm x B155mm x T20mm
- Jahr 2010
- EAN 9781441944092
- Format Kartonierter Einband
- ISBN 1441944095
- Veröffentlichung 25.11.2010
- Titel FinFETs and Other Multi-Gate Transistors
- Untertitel Integrated Circuits and Systems
- Gewicht 540g
- Herausgeber Springer US