Gallium Nitride Electronics

GaN Electronics covers developments in III-N semiconductor-based electronics for high power and high speed RF applications. The book thoroughly examines the material properties of these polar materials, the state of the art in substrates, epitaxial growth, device technology, modeling, and circuit examples. It concludes with an overview of integration and packaging. The book is based on nearly a decade of materials and electronics research at the leading nitride research institution in Europe. This comprehensive monograph and tutorial is an excellent training tool for graduate students of electrical engineering, communication engineering, and physics. It is also recommended for materials, device, and circuit engineers in research and industry.

Comprehensive presentation of the state of the art in GaN electronics with strong emphasis on application Comprehensive presentation - from materials to packaging Interdisciplinary approach Includes supplementary material: sn.pub/extras

Autorentext

Rüdiger Quay was born in Köln, Germany, in 1971. He studied physics and economics at the University of Bonn and the RWTH Aachen, where he received his "Diplom" in physics in 1997. In summer 1996 he held a visiting research position at Los Alamos National Laboratory, New Mexico, USA, for his master's thesis. In 1999, he was a visiting researcher at the Beckman Institute, University of Illinois, Urbana Champaign. In 2001 he received the doctoral degree in technical sciences with honors from the Technische Universität Wien, Austria. He has published more than 30 refereed publications and he is one of the authors of the book "Analysis and Simulation of Heterostructure Devices". His scientific interests include RF-semiconductor device and process development, heterostructure device modeling and simulation, and circuit and reliability issues. Rüdiger Quay currently is a research engineer at Fraunhofer Institute for Applied Solid-State Physics (IAF) in Freiburg, Germany, involved in the development and large-signal characterization of high-power and high-speed AlGaN/GaN amplifiers and the development of high-speed InP HBTs for high data rate communication at 80~Gbit/s and beyond.

Inhalt
III-N Materials, and the State-of-the-Art of Devices and Circuits.- Epitaxy for III-N-Based Electronic Devices.- Device Processing Technology.- Device Characterization and Modeling.- Circuit Considerations and III-N Examples.- Reliability Aspects and High-Temperature Operation.- Integration, Thermal Management, and Packaging.- Outlook.