GaN HEMT Modeling and Design for mm and sub-mm Wave Power Amplifiers

This work initially compares GaN high electron mobility transistors (HEMTs) based on the established Ga-face technology and the emerging N-face technology. An investigation is then carried out on the short channel effects in ultra-scaled GaN and InP HEMTs. The dielectric effects of the passivation layer in millimeter-wave, high-power GaN HEMTs are also investigated by focusing on the effective gate length, the gate fringing capacitance, and the drain-to-gate feedback capacitance. Lastly, efficient Full Band Monte Carlo particle-based device simulations of the large-signal performance of millimeter-wave transistor power amplifiers with high-Q matching networks are reported for the first time. In particular, a Cellular Monte Carlo code is self-consistently coupled with a Harmonic Balance frequency domain circuit solver. This book provides device engineers with an insight about the link between the nano-scale carrier dynamics and the device performance. It also introduces an efficient tool for the device early-stage design for RF power amplifiers.

Autorentext

Diego Guerra received the Ph.D. degree in Electrical Engineering from Arizona State University, Tempe, in 2011. His research interests include the modeling and the small-signal/large-signal characterization of GaN HEMTs for millimeter-wave power amplifiers (he is author and co-author of 15 publications) and InP HEMTsfor terahertz electronics.