Ge-based channel MOSFETs

This work presents research on high mobility channel MOSFET structures (planar and non-planar) using group IV material (mainly SiGe) for enhanced performance and reduced operating power. This work especially focuses on improving the performance of short channel device performance of SiGe channel pMOSFETs which has long been researched yet clearly demonstrated in literature only recently. To reach the goal, novel processing technologies such as millisecond flash source/drain anneal and high pressure hydrogen post-metal anneal are explored. Finally, performance dependence on channel and substrate direction has been analyzed to find the optimal use of these SiGe channels. This work describes an exciting opportunity of weighting the possibility of using high mobility channel MOSFETs for future logic technology.

Autorentext

Se-Hoon Lee received a B.S degree in Electrical Engineering from Seoul National University in August 2004. He received his M.S. and Ph.D. in Electrical and Computer Engineering from the University of Texas at Austin in 2007, and in 2011 respectively. After his Ph.D., he joined an electronics company as an engieer working on SRAM reliability.