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Gettering Defects in Semiconductors
Details
Gettering Defects in Semiconductors fulfills three basic purposes:
to systematize the experience and research in exploiting various gettering techniques in microelectronics and nanoelectronics;
to identify new directions in research, particularly to enhance the perspective of professionals and young researchers and specialists;
to fill a gap in the contemporary literature on the underlying semiconductor-material theory.
The authors address not only well-established gettering techniques but also describe contemporary trends in gettering technologies from an international perspective. The types and properties of structural defects in semiconductors, their generating and their transforming mechanisms during fabrication are described. The primary emphasis is placed on classifying and describing specific gettering techniques, their specificity arising from both their position in a general technological process and the regimes of their application. This book addresses both engineers and material scientists interested in semiconducting materials theory and also undergraduate and graduate students in solidstate microelectronics and nanoelectronics. A comprehensive list of references provides readers with direction for further reading.
Only monograph describing the current state of the art Combines the standard techniques with the results of the author's research
Klappentext
Gettering Defects in Semiconductors fulfills three basic purposes:
to systematize the experience and research in exploiting various gettering techniques in microelectronics and nanoelectronics;
to identify new directions in research, particularly to enhance the perspective of professionals and young researchers and specialists;
to fill a gap in the contemporary literature on the underlying semiconductor-material theory.
The authors address not only well-established gettering techniques but also describe contemporary trends in gettering technologies from an international perspective. The types and properties of structural defects in semiconductors, their generating and their transforming mechanisms during fabrication are described. The primary emphasis is placed on classifying and describing specific gettering techniques, their specificity arising from both their position in a general technological process and the regimes of their application. This book addresses both engineers and material scientists interested in semiconducting materials theory and also undergraduate and graduate students in solidstate microelectronics and nanoelectronics. A comprehensive list of references provides readers with direction for further reading.
Inhalt
Basic technological processes and defect formation in the components of device structures.- Effects of defects on electrophysical and functional parameters in semiconducting structures and devices.- Techniques for high-temperature gettering.- Physical foundations for low-temperature gettering techniques.
Weitere Informationen
- Allgemeine Informationen
- GTIN 09783642065705
- Auflage Softcover reprint of hardcover 1st edition 2005
- Übersetzer Victor Gloumov
- Sprache Englisch
- Genre Maschinenbau
- Lesemotiv Verstehen
- Anzahl Seiten 404
- Größe H235mm x B155mm x T22mm
- Jahr 2010
- EAN 9783642065705
- Format Kartonierter Einband
- ISBN 3642065708
- Veröffentlichung 21.10.2010
- Titel Gettering Defects in Semiconductors
- Autor Victor A. Perevostchikov , Vladimir D. Skoupov
- Untertitel Springer Series in Advanced Microelectronics 19
- Gewicht 610g
- Herausgeber Springer Berlin Heidelberg