Growth of Bulk SiGe Single Crystals by Liquid Phase Diffusion Method

SiGe is an emerging semiconductor material with many
promising applications in high-speed micro
electronics and thermo-photovoltaics. In light of
significant differences in physical properties of
constituent elements, it is still a challenge to
grow bulk SiGe single crystals with uniform
composition and low defect density. Thus, it is
essential to scrutinize the solidification behaviour
of SiGe system. Hence, this book presents a combined
experimental and modelling study for the growth of
SiGe single crystals by a new solution growth
process called Liquid Phase Diffusion (LPD).
Following a brief introduction of the subject, the
crystal structure, phase diagram, growth techniques
used for producing SiGe single crystals and their
place in the overall scheme of SiGe alloy systems
are presented. The development of a macroscopic
mixture model is presented to model the LPD growth
system. The LPD growth system is examined using two-
and three-dimensional transient simulations. The
design, construction, and testing of the LPD growth
system are presented along with the experimental
results and characterization of grown crystals.

Autorentext

Mehmet Yildiz: Ph.D. in Mechanical Engineering Department, University of Victoria (UVic), BC, Canada, 2005, Assistant Professor in the Faculty of Engineering & Natural Sciences, Sabanci University, Istanbul, Turkey. Sadik Dost: Ph.D., Istanbul, P.Eng, Professor and Canada Research Chair in Semiconductor Crystal Growth, UVic, BC, Canada.

Klappentext

SiGe is an emerging semiconductor material with many promising applications in high-speed micro electronics and thermo-photovoltaics. In light of significant differences in physical properties of constituent elements, it is still a challenge to grow bulk SiGe single crystals with uniform composition and low defect density. Thus, it is essential to scrutinize the solidification behaviour of SiGe system. Hence, this book presents a combined experimental and modelling study for the growth of SiGe single crystals by a new solution growth process called Liquid Phase Diffusion (LPD). Following a brief introduction of the subject, the crystal structure, phase diagram, growth techniques used for producing SiGe single crystals and their place in the overall scheme of SiGe alloy systems are presented. The development of a macroscopic mixture model is presented to model the LPD growth system. The LPD growth system is examined using two- and three-dimensional transient simulations. The design, construction, and testing of the LPD growth system are presented along with the experimental results and characterization of grown crystals.