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Handbook of Advanced Plasma Processing Techniques
Details
The ability to make small features in Si, metals, dielectrics and other materials is what has enabled rapid advances in computing, communications, aeronautics and all other technologies that depend on microelectronics, miniature sensors and actuators and magnetic data storage. Plasma techniques enable the fine control and accurate pattern transfer and thus are central to our technology age.
This volume brings together some of the most well-known scientists in each of the topics covered, many of whom have pioneered the development of plasma processing techniques Includes supplementary material: sn.pub/extras
Inhalt
1 Some Fundamental Aspects of Plasma-Assisted Etching.- 1.1 Introduction.- 1.2 The Evolution of Plasma Etching Equipment.- 1.3 The Role of Ions in Reactive Ion Etching.- 1.4 The Influence of the Reactor Walls and Other Surfaces.- 1.5 Ion Beam-Based Methods.- 1.6 Summary.- References.- 2 Plasma Fundamentals for Materials Processing.- 2.1 Introduction.- 2.2 Single Particle Motion.- 2.3 Collision Processes.- 2.4 Velocity Distributions.- 2.5 Sheaths.- 2.6 Plasma Transport.- 2.7 Dielectric Properties.- 2.8 Plasma Sources for Thin Films Processing.- References.- 3 Plasma Modeling.- 3.1 Introduction.- 3.2 Historical Perspective.- 3.3 Plasma Modeling Issues.- 3.4 Chemical Reaction Mechanisms.- 3.5 Examples of Application of Plasma Modeling to Design or Optimization.- 3.6 Future Directions of Plasma Modeling.- References.- 4 Plasma Reactor Modeling.- 4.1 Introduction.- 4.2 Reactor Scale Model.- 4.3 Feature Level Modeling.- 4.4 Database Needs.- 4.5 Concluding Remarks.- References.- 5 Overview of Plasma Diagnostic Techniques.- 5.1 Introduction.- 5.2 Plasma Electrical Characterization.- 5.3 Optical Diagnostic Techniques.- References.- 6 Mass Spectrometric Characterization of Plasma Etching Processes.- 6.1 Introduction.- 6.2 Application to Fundamental Studies.- 6.3 Application in Etch Processing Reactors.- 6.4 Summary and Future Directions.- References.- 7 Fundamentals of Plasma Process-Induced Charging and Damage.- 7.1 Introduction.- 7.2 The Origin of Pattern-Dependent Charging.- 7.3 The Notching Effect.- 7.4 Other Profile Effects Influenced by Charging.- 7.5 Gate Oxide Degradation.- 7.6 Charging Reduction Methodology.- 7.7 Concluding Remarks.- References.- 8 Surface Damage Induced by Dry Etching.- 8.1 Introduction.- 8.2 Surface Damage in Si.- 8.3 Surface Damage in III-V Semiconductors.- 8.4 Damage Removal.- 8.5 Summary.- References.- 9 Photomask Etching.- 9.1 Introduction.- 9.2 Optical Lithography.- 9.3 X-Ray Lithography.- 9.4 SCALPEL.- 9.5 EUVL.- 9.6 Ion Projection Lithography.- 9.7 IPL Mask Distortion Issues.- 9.8 Conclusion.- References.- 10 Bulk Si Micromachining for Integrated Microsystems and MEMS Processing.- 10.1 Introduction.- 10.2 Etch Technologies.- 10.3 ECR Results.- 10.4 DRIE Results.- 10.5 DRIE Applications.- 10.6 Conclusions.- References.- 11 Plasma Processing of III-V Materials.- 11.1 Introduction.- 11.2 Dry Etching Techniques.- 11.3 Masking Materials and Methods.- 11.4 Dry Etching Chemistries.- 11.5 Dry Etching of GaAs and Related Materials.- 11.6 Dry Etching of InP and Related Materials.- 11.7 Dry Etching of GaN and Related Materials.- 11.8 Selective Dry Etching of III-V Materials.- 11.9 Conclusion.- References.- 12 Ion Beam Etching of Compound Semiconductors.- 12.1 Introduction.- 12.2 Definitions.- 12.3 Ion Sources.- 12.4 Historic Development.- 12.5 Grid Design, Beam Uniformity, and Divergence.- 12.6 Brief Overview of Etching Kinetics and Chemistry.- 12.7 Surface Quality and Etch Masking.- 12.8 RIBE Etch Technology.- 12.9 CAIBE Etch Technology.- 12.10 Endpoint Detection.- 12.11 Damage.- References.- 13 Dry Etching of InP Vias.- 13.1 Introduction.- 13.2 Past Difficulties in Obtaining High Rate Etching for InP.- 13.3 High Density Plasma Sources for High InP Etch Rate.- 13.4 Measurement of Plasma Heating for InP Etching.- 13.5 Application to Via Hole Etching.- 13.6 Summary.- References.- 14 Device Damage During Low Temperature High-Density Plasma Chemical Vapor Deposition.- 14.1 Introduction.- 14.2 Experimental.- 14.3 Results and Discussion.- 14.4 Summary and Conclusions.- References.- 15 Dry Etching of Magnetic Materials.- 15.1Introduction.- 15.2 Ion Milling.- 15.3 Cl2-Based ICP Etching of NiFe and Related Materials.- 15.4 Copper Dry Etching in Cl2/Ar.- 15.5 CO/NH3 Etching of Magnetic Materials.- 15.6 ECR and ICP Etching of NiMnSb.- 15.7 Dry Etching of LaCaMnOx and SmCo.- 15.8 Summary and Conclusions.- References.
Weitere Informationen
- Allgemeine Informationen
- GTIN 09783642630965
- Auflage Softcover reprint of the original 1st ed. 2000
- Editor R. J. Shul, S. J. Pearton
- Sprache Englisch
- Genre Maschinenbau
- Lesemotiv Verstehen
- Anzahl Seiten 672
- Größe H235mm x B155mm x T36mm
- Jahr 2012
- EAN 9783642630965
- Format Kartonierter Einband
- ISBN 3642630960
- Veröffentlichung 01.11.2012
- Titel Handbook of Advanced Plasma Processing Techniques
- Gewicht 1001g
- Herausgeber Springer