High Performance GaN Light-Emitting Diode

The reliability of InGaN/GaN light emitting diodes (LEDs) with different emission wavelengths and different geometries was studied. Device performances, like current-voltage characteristics, 1/f noise spectrum, leakage, static resistance, were measured. The devices underwent a 1000-hr constant-current stress test and their optical output degradation rate was examined. The results were explained by cross-related data.

Autorentext

Zonglin Li received the M.S.E.E degree in 2009 from the University of Hong Kong, Hong Kong. She is currently working toward the PhD degree in electrical engineering in University of California at Riverside. Her primary interests are gallium nitride based device process, technology and integration on silicon platform.