Hot Carrier Degradation in Semiconductor Devices

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This book provides readers with a variety of tools to address the challenges posed by hot carrier degradation, one of today's most complicated reliability issues in semiconductor devices. Coverage includes an explanation of carrier transport within devices and book-keeping of how they acquire energy (become hot), interaction of an ensemble of colder and hotter carriers with defect precursors, which eventually leads to the creation of a defect, and a description of how these defects interact with the device, degrading its performance.


Describes the intricacies of hot carrier degradation in modern semiconductor technologies Covers the entire hot carrier degradation phenomenon, including topics such as characterization, carrier transport, carrier-defect interaction, technological impact, circuit impact, etc Enables detailed understanding of carrier transport, interaction of the carrier ensemble with the defect precursors, and an accurate assessment of how the newly created defects impact the device performance Covers modeling issues starting from detailed physics-based TCAD approaches up to efficient SPICE-compatible compact models Includes supplementary material: sn.pub/extras

Autorentext
Tibor Grasser is an Associate Professor at the Institute for Microelectronics for Technische Universität Wien.

Inhalt
Part I: Beyond Lucky Electrons.- From Atoms to Circuits: Theoretical and Empirical Modeling of Hot Carrier Degradation.- The Energy Driven Hot Carrier Model.- Hot-Carrier Degradation in Decananometer.- Physics-based Modeling of Hot-carrier Degradation.- The Spherical Harmonics Expansion Method for Assessing Hot Carrier Degradation.- Recovery from Hot Carrier Induced Degradation Through Temperature Treatment.- Characterization of MOSFET Interface States Using the Charge Pumping Technique.- Part II: CMOS and Beyond.- Channel Hot Carriers in SiGe and Ge pMOSFETs.- Channel Hot Carrier Degradation and Self-Heating Effects in FinFETs.- Characterization and Modeling of High-Voltage LDMOS Transistors.- Compact modelling of the Hot-carrier Degradation of Integrated HV MOSFETs.- Hot-Carrier Degradation in Silicon-Germanium Heterojunction Bipolar Transistors.

Weitere Informationen

  • Allgemeine Informationen
    • GTIN 09783319089935
    • Genre Elektrotechnik
    • Auflage 2015
    • Editor Tibor Grasser
    • Sprache Englisch
    • Lesemotiv Verstehen
    • Anzahl Seiten 528
    • Größe H241mm x B160mm x T34mm
    • Jahr 2014
    • EAN 9783319089935
    • Format Fester Einband
    • ISBN 3319089935
    • Veröffentlichung 27.11.2014
    • Titel Hot Carrier Degradation in Semiconductor Devices
    • Gewicht 951g
    • Herausgeber Springer International Publishing

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