Indium Gallium Arsenide
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BEU7HH6A6O6
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Geliefert zwischen Do., 30.10.2025 und Fr., 31.10.2025
Details
Indium gallium arsenide (InGaAs) is a semiconductor composed of indium, gallium and arsenic. It is used in high-power and high-frequency electronics because of its superior electron velocity with respect to the more common semiconductors silicon and gallium arsenide. InGaAs bandgap also makes it the detector material of choice in optical fiber communication at 1300 and 1550 nm. Gallium indium arsenide (GaInAs) is an alternative name for InGaAs. The indium content determines the two-dimensional charge carrier density.
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GarantieWeitere Informationen
- Allgemeine Informationen
- GTIN 09786130803896
- Anzahl Seiten 112
- Genre Wärme- und Energietechnik
- Editor Frederic P. Miller, Agnes F. Vandome, John McBrewster
- Herausgeber Alphascript Publishing
- EAN 9786130803896
- Format Fachbuch
- Titel Indium Gallium Arsenide
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